Power Switching MOSFET RENESAS 2SK1317-E with 1500V Drain to Source Voltage and High Speed Switching
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Product Description
Product Overview
The 2SK1317 is a Silicon N Channel MOS FET designed for high-speed power switching applications. It features a high breakdown voltage of 1500V, low drive current, and no secondary breakdown, making it suitable for switching regulators, DC-DC converters, and motor drivers.
Product Attributes
- Brand: RENESAS
- Package Code: PRSS0004ZE-A
- Package Name: TO-3P
Technical Specifications
| Item | Symbol | Ratings | Unit | Test conditions |
| Drain to source voltage | VDSS | 1500 | V | |
| Gate to source voltage | VGSS | ±20 | V | |
| Drain current | ID | 2.5 | A | |
| Drain peak current | ID(pulse) | 7 | A | PW ≤ 10 µs, duty cycle ≤ 1% |
| Body to drain diode reverse drain current | IDR | 2.5 | A | |
| Channel dissipation | Pch*2 | 100 | W | Value at TC = 25°C |
| Channel temperature | Tch | 150 | °C | |
| Storage temperature | Tstg | –55 to +150 | °C | |
| Drain to source breakdown voltage | V(BR)DSS | 1500 | V | ID = 10 mA, VGS = 0 |
| Gate to source leak current | IGSS | ±1 | µA | VGS = ±20 V, VDS = 0 |
| Zero gate voltage drain current | IDSS | 500 | µA | VDS = 1200 V, VGS = 0 |
| Gate to source cutoff voltage | VGS(off) | 2.0 to 4.0 | V | ID = 1 mA, VDS = 10 V |
| Static drain to source on state resistance | RDS(on) | 9 to 12 | Ω | ID = 2 A, VGS = 15 V *3 |
| Forward transfer admittance | |yfs| | 0.45 to 0.75 | S | ID = 1 A, VDS = 20 V *3 |
| Input capacitance | Ciss | 990 | pF | VDS = 10 V, VGS = 0, f = 1 MHz |
| Output capacitance | Coss | 125 | pF | VDS = 10 V, VGS = 0, f = 1 MHz |
| Reverse transfer capacitance | Crss | 60 | pF | VDS = 10 V, VGS = 0, f = 1 MHz |
| Turn-on delay time | td(on) | 17 | ns | ID = 2 A, VGS = 10 V, RL = 15 Ω |
| Rise time | tr | 70 | ns | ID = 2 A, VGS = 10 V, RL = 15 Ω |
| Turn-off delay time | td(off) | 110 | ns | ID = 2 A, VGS = 10 V, RL = 15 Ω |
| Fall time | tf | 60 | ns | ID = 2 A, VGS = 10 V, RL = 15 Ω |
| Body to drain diode forward voltage | VDF | 0.9 | V | IF = 2 A, VGS = 0 |
| Body to drain diode reverse recovery time | trr | 1750 | ns | IF = 2 A, VGS = 0, diF/dt = 100 A/µs *3 |
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