Dual N Channel Power MOSFET Shenzhen ruichips Semicon RU30D20M3 with Rugged Construction and Avalanche Tested

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Product Description

Product Overview

The RU30D20M3 is a Dual N-Channel Advanced Power MOSFET designed for switching applications. It features Ruichips' advanced TrenchTM technology, offering excellent QgxRDS(on) product (FOM), reliability, and ruggedness. This device is 100% avalanche tested and available in lead-free and green (RoHS compliant) versions. Ideal for on-board power in servers and synchronous rectification.

Product Attributes

Brand: Ruichips
Origin: Shenzhen City Ruichips Semiconductor Co., Ltd
Certifications: RoHS Compliant
Material: Advanced TrenchTM technology

Technical Specifications

Parameter	Symbol	Rating	Unit	Test Condition
Absolute Maximum Ratings	VDSS	30	V
	VGSS	±20	V
	TJ	150	°C
	TSTG	-55 to 150	°C
	ID (TC=25°C)	20	A
	IDP (TC=25°C, Pulse width 300µs)	80	A
	IS (TC=25°C)	20	A	Mounted on Large Heat Sink
	PD (TC=25°C)	20	W
	PD (TA=25°C)	10.8	W	Mounted on Large Heat Sink
	PD (TA=70°C)	8.7	W	Mounted on Large Heat Sink
Static Characteristics	IDSS	1	µA	VDS=30V, VGS=0V
	IDSS	±100	nA	VGS=±20V, VDS=0V
	BVDSS	30	V	VGS=0V, IDS=250µA
	VGS(th)	1 to 2.5	V	VDS=VGS, IDS=250µA
	RDS(ON)	8.5 to 10	mΩ	VGS=10V, IDS=10A
	RDS(ON)	11.5 to 14	mΩ	VGS=4.5V, IDS=8A
	VSD	1.3	V	ISD=20A, VGS=0V
Dynamic Characteristics	trr	24	ns	ISD=20A, dlSD/dt=100A/µs
	Qrr	13	nC	ISD=20A, VGS=0V
	Ciss	930	pF	VDS=24V, VGS=10V, IDS=20A, Frequency=1.0MHz
	Coss	230	pF
	Crss	90	pF
Gate Charge Characteristics	Qg	18	nC	VDD=15V, RL=0.75Ω, IDS=20A, VGEN=10V, RG=3Ω
	Qgs	5	nC
	Qgd	7	nC
	RG	1	Ω	VGS=0V, VDS=15V, Frequency=1.0MHz
Thermal Resistance	RθJC	8	°C/W
Thermal Resistance	RθJA	35	°C/W	Mounted on 1 inch square copper board, t≤10sec
Avalanche Ratings	EAS	42	mJ	IAS =13A, VDD = 24V, RG = 50Ω, Starting TJ = 25°C