power transistor Shenzhen ruichips Semicon RU40L10L featuring low on resistance and high avalanche capability

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Product Description

Product Overview

The RU40L10L is a P-Channel Advanced Power MOSFET from Ruichips Semiconductor. It features a -40V drain-source voltage, -32A continuous drain current, and low on-state resistance (RDS(ON)) of 20m typ. at VGS=-10V. This MOSFET is designed with a super high dense cell structure, ESD protection, and is 100% avalanche tested, making it reliable and rugged. It is suitable for applications such as power supplies and inverters.

Product Attributes

Brand: Ruichips
Product Name: RU40L10L
Certifications: RoHS Compliant (Lead Free and Green Devices Available)
Package: TO252

Technical Specifications

Symbol	Parameter	Test Condition	Unit	Min.	Typ.	Max.
VDSS	Drain-Source Voltage		V	-40
VGSS	Gate-Source Voltage		V			20
TJ	Maximum Junction Temperature		C			175
TSTG	Storage Temperature Range		C	-55		175
ID	Continuous Drain Current	VGS=-10V, TC=25C	A			-32
ID	Continuous Drain Current	VGS=-10V, TC=100C	A			-23
IDP	300s Pulse Drain Current	TC=25C	A			-120
PD	Maximum Power Dissipation	TC=25C	W		52
PD	Maximum Power Dissipation	TC=100C	W		26
RJC	Thermal Resistance-Junction to Case		C/W		2.9
EAS	Avalanche Energy, Single Pulsed		mJ		144
BVDSS	Drain-Source Breakdown Voltage	VGS=0V, IDS=-250A	V	-40
IDSS	Zero Gate Voltage Drain Current	VDS=-40V, VGS=0V	A		-1
IDSS	Zero Gate Voltage Drain Current	TJ=85C	A		-30
VGS(th)	Gate Threshold Voltage	VDS=VGS, IDS=-250A	V	-1.0	-1.8	-2.5
IGSS	Gate Leakage Current	VGS=20V, VDS=0V	A			10
RDS(ON)	Drain-Source On-state Resistance	VGS=-10V, IDS=-10A	m		20	25
RDS(ON)	Drain-Source On-state Resistance	VGS=-4.5V, IDS=-8A	m		30	35
VSD	Diode Forward Voltage	ISD=-1A, VGS=0V	V		-0.75	-1
trr	Reverse Recovery Time	ISD=-1A, dlSD/dt=100A/s	ns		36
Qrr	Reverse Recovery Charge	ISD=-1A, dlSD/dt=100A/s	nC		28
Ciss	Input Capacitance	VGS=0V, VDS=-20V, F=1.0MHz	pF		2310
Coss	Output Capacitance	VGS=0V, VDS=-20V, F=1.0MHz	pF		250
Crss	Reverse Transfer Capacitance	VGS=0V, VDS=-20V, F=1.0MHz	pF		165
td(ON)	Turn-on Delay Time	VDD=-20V, RL=0.66, IDS=-30A, VGEN=-10V, RG=6	ns		15
tr	Turn-on Rise Time		ns		23
td(OFF)	Turn-off Delay Time		ns		43
tf	Turn-off Fall Time		ns		17
Qg	Total Gate Charge	VDS=-32V, VGS=-10V, IDS=-30A	nC		45
Qgs	Gate-Source Charge		nC		8
Qgd	Gate-Drain Charge		nC		15