Product Overview
The TP65H100G4PS is a 650V, 92m Gallium Nitride (GaN) FET utilizing Renesass Gen IV platform. This normally-off device integrates a high-voltage GaN HEMT with a low-voltage silicon MOSFET, offering enhanced reliability and performance. The Gen IV SuperGaN platform leverages advanced epitaxy and patented design technologies to improve manufacturability and efficiency over silicon by reducing gate charge, output capacitance, crossover loss, and reverse recovery charge. It is designed for increased efficiency in both hard- and soft-switched circuits, leading to higher power density, reduced system size and weight, and lower overall system cost. It is easy to drive with commonly-used gate drivers, and its GSD pin layout aids high-speed design.
Product Attributes
- Brand: Renesas
- Platform: Gen IV SuperGaN
- Material: Gallium Nitride (GaN)
- Certifications: JEDEC-qualified, RoHS compliant, Halogen-free packaging
Technical Specifications
| Part Number | Package | VDS (V) min | VDSS(TR) (V) max | RDS(on) (m) max* | QOSS (nC) typ | QG (nC) typ |
| TP65H100G4PS | TO-220 | 650 | 800 | 110 | 56 | 14.4 |
Absolute Maximum Ratings
| Symbol | Parameter | Limit Value | Unit |
| VDSS | Drain to source voltage (TJ = -55C to 150C) | 650 | V |
| VDSS(TR) | Transient drain to source voltage (a) | 800 | V |
| VGSS | Gate to source voltage | 20 | V |
| PD | Maximum power dissipation @TC=25C | 65.8 | W |
| ID | Continuous drain current @TC=25C (b) | 18.9 | A |
| ID | Continuous drain current @TC=100C (b) | 12 | A |
| IDM | Pulsed drain current (pulse width: 10s) | 95 | A |
| TC | Operating temperature Case | -55 to +150 | C |
| TJ | Junction | -55 to +150 | C |
| TS | Storage temperature | -55 to +150 | C |
| TSOLD | Reflow soldering temperature (c) | 260 | C |
Thermal Resistance
| Symbol | Parameter | Typical | Unit |
| RJC | Junction-to-case | 1.9 | C/W |
| RJA | Junction-to-ambient (d) | 50 | C/W |
ESD
| Symbol | Parameter | Maximum | Unit |
| HDM | Human-body model | 750 | V |
| CDM | Charged-device model | 2000 | V |
Electrical Parameters
| Symbol | Parameter | Min | Typ | Max | Unit | Test Conditions |
| Forward Device Characteristics |
| VDSS(BL) | Maximum drain-source voltage | 650 | | | V | VGS=0V |
| VGS(th) | Gate threshold voltage | 3.2 | 3.65 | 4.1 | V | VDS=VGS, ID=1.8mA |
| VGS(th)/TJ | Gate threshold voltage temperature coefficient | | -5.8 | | mV/C | |
| RDS(on)eff | Drain-source on-resistance (f) | | 92 | 110 | m | VGS=10V, ID=12A, TJ=25C |
| RDS(on)eff | Drain-source on-resistance (f) | | 184 | | m | VGS=10V, ID=12A, TJ=150C |
| IDSS | Drain-to-source leakage current | | 2.5 | 25 | A | VDS=650V, VGS=0V, TJ=25C |
| IDSS | Drain-to-source leakage current | | 5 | | A | VDS=650V, VGS=0V, TJ=150C |
| IGSS | Gate-to-source forward leakage current | | | 100 | nA | VGS=20V |
| IGSS | Gate-to-source reverse leakage current | | | -100 | nA | VGS=-20V |
| CISS | Input capacitance | | 818 | | pF | VGS=0V, VDS=400V, f=500kHz |
| COSS | Output capacitance | | 53 | | pF | |
| CRSS | Reverse transfer capacitance | | 3.6 | | pF | |
| CO(er) | Output capacitance, energy related (g) | | 78 | | pF | VGS=0V, VDS=0V to 400V |
| CO(tr) | Output capacitance, time related (h) | | 139 | | pF | |
| QG | Total gate charge | | 14.4 | | nC | VDS=400V, VGS=0V to 10V, ID=12A |
| QGS | Gate-source charge | | 4.7 | | nC | |
| QGD | Gate-drain charge | | 5.2 | | nC | |
| QOSS | Output charge | | 56 | | nC | VGS=0V, VDS=0V to 400V |
| tD(on) | Turn-on delay | | 23 | | ns | VDS=400V, VGS=0V to 12V, ID=13A, RG=36, ZFB=120 at 100MHz |
| tR | Rise time | | 7.1 | | ns | |
| tD(off) | Turn-off delay | | 58 | | ns | |
| tF | Fall time | | 7.5 | | ns | |
| Reverse Device Characteristics |
| IS | Reverse current | | | 12 | A | VGS=0V, TC=100C, 20% duty cycle |
| VSD | Reverse voltage (i) | | 1.7 | | V | VGS=0V, IS=12A |
| VSD | Reverse voltage (i) | | 1.4 | | V | VGS=0V, IS=8A |
| tRR | Reverse recovery time | | 17 | | ns | IS=13A, VDD=400V, di/dt=1000A/ms |
| QRR | Reverse recovery charge (j) | | 0 | | nC | Excludes QOSS |
