Compact dual transistor ROHM EMA5T2R designed for inverter interface and driver circuit applications
Price:
Negotiable
MOQ:
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Delivery Time:
Negotiable
Product Description
Product Overview
The EMA5 / UMA5N / FMA5A are common emitter dual digital transistors designed for applications requiring compact solutions. These devices integrate two DTA123J chips into a single package, significantly reducing mounting costs and board space. They are suitable for use in inverters, interfaces, and driver circuits.
Product Attributes
- Brand: ROHM
- Product Family: EMA5 / UMA5N / FMA5A
Technical Specifications
| Model | Package Type | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking |
|---|---|---|---|---|---|---|---|
| EMA5 | SOT-553 (EMT5) | 1616 | T2R | 180 | 8 | 8000 | A5 |
| UMA5N | SOT-353 (UMT5) | 2021 | TR | 180 | 8 | 3000 | A5 |
| FMA5A | SOT-25 (SMT5) | 2928 | T148 | 180 | 8 | 3000 | A5 |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25C) <For DTr1 and DTr2 in common> | ||||||
| Supply voltage | VCC | -50 | V | |||
| Input voltage | VIN | -12 | 5 | V | ||
| Output current | IO | -100 | mA | |||
| Collector current | IC(MAX)*1 | -100 | mA | |||
| Power dissipation (EMA5) | PD*2*3 | 150 | mW | |||
| Power dissipation (UMA5N) | PD*2*3 | 150 | mW | |||
| Power dissipation (FMA5A) | PD*2*4 | 300 | mW | |||
| Junction temperature | Tj | 150 | ||||
| Range of storage temperature | Tstg | -55 | +150 | |||
| Electrical Characteristics (Ta = 25C) <For DTr1 and DTr2 in common> | ||||||
| Input voltage (OFF) | VI(off) | VCC = -5V, IO = -100A | -0.5 | V | ||
| Input voltage (ON) | VI(on) | VO = -0.3V, IO = -5mA | -1.1 | V | ||
| Output voltage (ON) | VO(on) | IO = -5mA, II = -0.25mA | -100 | -300 | mV | |
| Input current | II | VI = -5V | -3.6 | mA | ||
| Output current (OFF) | IO(off) | VCC = -50V, VI = 0V | -500 | nA | ||
| DC current gain | GI | VO = -5V, IO = -10mA | 80 | - | ||
| Input resistance | R1 | 2.2 | k | |||
| Resistance ratio | R2/R1 | 17 | 21 | 26 | - | |
| Transition frequency | fT*1 | VCE = -10V, IE = 5mA, f = 100MHz | 250 | MHz | ||
*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina