Shenzhen ruichips Semicon RU75N08R N Channel Power MOSFET with 75V Drain Source Voltage and Avalanche Rating

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Product Description

Product Overview

The RU75N08 is an N-Channel Advanced Power MOSFET designed for switching applications. It features ultra-low on-resistance, exceptional dv/dt capability, fast switching, and is fully avalanche rated. With a 175C operating temperature and lead-free/green availability, it is suitable for various switching application systems.

Product Attributes

Brand: Ruichips Semiconductor
Origin: CHINA
Certifications: Green & Lead Free Available

Technical Specifications

Model	Parameter	Rating	Unit	Test Condition	Min.	Typ.	Max.
RU75N08	Drain-Source Voltage (VDSS)	75	V
	Gate-Source Voltage (VGSS)	25	V
	Maximum Junction Temperature (TJ)	175	C
	Storage Temperature Range (TSTG)	-55 to 175	C
	Diode Continuous Forward Current (IS)	80	A	TC=25C
	Pulse Drain Current (IDP)	360	A	300s Pulse, TC=25C
	Continuous Drain Current (ID)	80	A	TC=25C
	Continuous Drain Current (ID)	76	A	TC=100C
	Maximum Power Dissipation (PD)	280	W	TC=25C
	Maximum Power Dissipation (PD)	140	W	TC=100C
	Thermal Resistance-Junction to Case (RJC)	0.55	C/W
	Avalanche Energy, Single Pulsed (EAS)	1.2	J
	Drain-Source Breakdown Voltage (BVDSS)	75	V	VGS=0V, IDS=250A	75
RU75N08	Zero Gate Voltage Drain Current (IDSS)	1	A	VDS= 75V, VGS=0V
	Zero Gate Voltage Drain Current (IDSS)	30	A	TJ=85C
	Gate Threshold Voltage (VGS(th))	2	V	VDS=VGS, IDS=250A	2	3	4
	Gate Leakage Current (IGSS)	100	nA	VGS=25V, VDS=0V
	Drain-Source On-state Resistance (RDS(ON))	8	m	VGS= 10V, IDS=40A		8	11
	Diode Forward Voltage (VSD)	0.83	V	ISD=20 A, VGS=0V		0.83	1.2
	Reverse Recovery Time (trr)	50	ns	ISD=40A, dlSD/dt=100A/s			50
	Reverse Recovery Charge (qrr)	110	nC	ISD=40A, dlSD/dt=100A/s			110
	Gate Resistance (RG)	1.4		VGS=0V,VDS=0V,F=1MHz			1.4
	Input Capacitance (Ciss)	3400	pF	VGS=0V, VDS= 30V, Frequency=1.0MHz			3400
	Output Capacitance (Coss)	450	pF	VGS=0V, VDS= 30V, Frequency=1.0MHz			450
RU75N08	Reverse Transfer Capacitance (Crss)	170	pF	VGS=0V, VDS= 30V, Frequency=1.0MHz			170
	Turn-on Delay Time (td(ON))	22	ns	VDD=35V, RL=35, IDS= 1A, VGEN= 10V, RG=7		22	40
	Turn-on Rise Time (tr)	11	ns	VDD=35V, RL=35, IDS= 1A, VGEN= 10V, RG=7		11	20
RU75N08	Turn-off Delay Time (td(OFF))	70	ns	VDD=35V, RL=35, IDS= 1A, VGEN= 10V, RG=7		70	130
	Turn-off Fall Time (tf)	62	ns	VDD=35V, RL=35, IDS= 1A, VGEN= 10V, RG=7		62	120
	Total Gate Charge (Qg)	75	nC	VDS=60V, VGS= 10V, IDS=80A		75	110
	Gate-Source Charge (Qgs)	18	nC	VDS=60V, VGS= 10V, IDS=80A
RU75N08	Gate-Drain Charge (Qgd)	25	nC	VDS=60V, VGS= 10V, IDS=80A			25