switching p channel power mos fet renesas 2sj598 zk e1 az with low on state resistance and gate diode
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Product Description
2SJ598 SWITCHING P-CHANNEL POWER MOS FET
The 2SJ598 is a P-channel MOS Field Effect Transistor designed for solenoid, motor, and lamp driver applications. It offers low on-state resistance and low input capacitance, with a built-in gate protection diode for enhanced reliability. This device is available in TO-251/TO-252 packages.
Product Attributes
- Brand: Renesas Electronics
- Product Type: P-CHANNEL POWER MOS FET
- Package: TO-251 (MP-3), TO-252 (MP-3Z)
Technical Specifications
| Part Number | Features | Absolute Maximum Ratings (TA = 25C) | Electrical Characteristics (TA = 25C) |
|---|---|---|---|
| 2SJ598 | Low on-state resistance: RDS(on)1 = 130 m MAX. (VGS = 10 V, ID = 6 A), RDS(on)2 = 190 m MAX. (VGS = 4.0 V, ID = 6 A) Low Ciss: Ciss = 720 pF TYP. Built-in gate protection diode | VDSS: 60 V VGSS: m20 V ID(DC) (TC = 25C): m12 A ID(pulse) (Note1): m30 A PT (TC = 25C): 23 W PT (TA = 25C): 1.0 W Tch: 150 C Tstg: 55 to +150 C IAS (Note2): 12 A EAS (Note2): 14.4 mJ | IDSS (VDS = 60 V, VGS = 0 V): 10 A IGSS (VGS = m16 V, VDS = 0 V): m10 A VGS(off) (VDS = 10 V, ID = 1 mA): 1.5 to 2.5 V |yfs| (VDS = 10 V, ID = 6 A): 5 to 11 S RDS(on)1 (VGS = 10 V, ID = 6 A): 102 to 130 m RDS(on)2 (VGS = 4.0 V, ID = 6 A): 131 to 190 m Ciss (VDS = 10 V): 720 pF TYP. Coss (VGS = 0 V): 150 pF TYP. Crss (f = 1 MHz): 50 pF TYP. td(on) (ID = 6 A): |
Notes:
1. PW 10 s, Duty Cycle 1%
2. Starting Tch = 25C, VDD = 30 V, RG = 25 , VGS = 20 0 V
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