Low VCEsat PNP middle power transistor ROHM 2SAR554RTL designed for driver applications and switching

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Product Description

2SAR554R PNP Middle Power Transistor

The 2SAR554R is a PNP middle power transistor designed for driver applications. It offers low VCE(sat) of -400mV (Max.) at IC/IB=-500mA/-25mA, making it suitable for low frequency amplification and high-speed switching applications. It is complementary to the NPN type 2SCR554R.

Product Attributes

Brand: ROHM
Complementary NPN Type: 2SCR554R

Technical Specifications

Parameter	Symbol	Conditions	Value	Unit
Absolute Maximum Ratings
Collector-base voltage	VCBO		-80	V
Collector-emitter voltage	VCEO		-80	V
Emitter-base voltage	VEBO		-6	V
Collector current	IC		-1.5	A
Collector current (Pulsed)	ICP*1	PW=10ms, Single pulse	-3	A
Power dissipation	PD*2	Each terminal mounted on a reference land.	0.5	W
Power dissipation	PD*3	Mounted on a ceramic board(40400.7mm).	1.0	W
Junction temperature	Tj		150
Range of storage temperature	Tstg		-55 to +150
Electrical Characteristics
Collector-base breakdown voltage	BVCBO	IC = -100A	-80	V
Collector-emitter breakdown voltage	BVCEO	IC = -1mA	-80	V
Emitter-base breakdown voltage	BVEBO	IE = -100A	-6	V
Collector cut-off current	ICBO	VCB = -80V	-1.0	A
Emitter cut-off current	IEBO	VEB = -4V	-1.0	A
Collector-emitter saturation voltage	VCE(sat)	IC = -500mA, IB = -25mA	-400 (Max.)	mV
DC current gain	hFE	VCE = -3V, IC = -100mA	120 - 390	-
Transition frequency	fT	VCE = -10V, IE = 200mA, f = 100MHz	340	MHz
Output capacitance	Cob	VCB = -10V, IE = 0A, f = 1MHz	15	pF
Turn-On time	ton	IC = -700mA, IB1 = -70mA, IB2 = 70mA, VCC -10V, RL = 15	50	ns
Storage time	tstg		300	ns
Fall time	tf		50	ns