Dual transistor ROHM UMH11NTN designed for inverter interface and driver featuring compact SOT363 package
Product Overview
The EMH11, UMH11N, and IMH11A are general-purpose dual digital transistors designed for inverter, interface, and driver applications. These devices integrate two independent DTC114E chips within a single SOT-563 (EMT6), SOT-363 (UMT6), or SOT-457 (SMT6) package. This integration allows for reduced mounting costs and board space, while the independent transistor elements prevent interference. They are compatible with automatic mounting machines using EMT3, UMT3, or SMT3 packages.
Product Attributes
- Brand: ROHM
- Product Series: EMH11 / UMH11N / IMH11A
Technical Specifications
| Model | Package | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking |
|---|---|---|---|---|---|---|---|
| EMH11 | SOT-563 (EMT6) | 1616 | T2R | 180 | 8 | 8000 | H11 |
| UMH11N | SOT-363 (UMT6) | 2021 | TN | 180 | 8 | 3000 | H11 |
| IMH11A | SOT-457 (SMT6) | 2928 | T110 | 180 | 8 | 3000 | H11 |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25C) <For DTr1 and DTr2 in common> | ||||||
| Supply voltage | VCC | 50 | V | |||
| Input voltage | VIN | -10 | 40 | V | ||
| Output current | IO | 50 | mA | |||
| Collector current | IC(MAX)*1 | 100 | mA | |||
| Power dissipation (EMH11) | PD*2*3 | 150 | mW | |||
| Power dissipation (UMH11N) | PD*2*3 | 150 | mW | |||
| Power dissipation (IMH11A) | PD*2*4 | 300 | mW | |||
| Junction temperature | Tj | 150 | ||||
| Range of storage temperature | Tstg | -55 | +150 | |||
| Electrical Characteristics (Ta = 25C) <For DTr1 and DTr2 in common> | ||||||
| Input voltage (VCC = 5V, IO = 100A) | VI(off) | 0.5 | V | |||
| Input voltage (VO = 0.3V, IO = 10mA) | VI(on) | 3.0 | V | |||
| Output voltage (IO = 10mA, II = 0.5mA) | VO(on) | 100 | 300 | mV | ||
| Input current (VI = 5V) | II | 880 | A | |||
| Output current (VCC = 50V, VI = 0V) | IO(off) | 500 | nA | |||
| DC current gain (VO = 5V, IO = 5mA) | GI | 30 | - | |||
| Input resistance | R1 | 7 | 10 | 13 | k | |
| Resistance ratio | R2/R1 | 0.8 | 1.0 | 1.2 | - | |
| Transition frequency (VCE = 10V, IE = -5mA, f = 100MHz) | fT | 250 | MHz | |||
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
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