Low saturation voltage power transistor ROHM 2SD1782KT146Q designed for in driver and switching applications

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Product Description

Product Overview

The 2SD1782K is a power transistor designed for driver applications. It features a low VCE(sat) of 0.2V (Typ.) and a high breakdown voltage of BVCEO=80V. This transistor complements the 2SB1198K and is available in a SOT-346 (SMT3) package.

Product Attributes

Brand: ROHM
Package: SOT-346 (SMT3)
Marking: AJ

Technical Specifications

Parameter	Symbol	Conditions	Values	Unit
Collector-base breakdown voltage	BVCBO	IC = 50A	80	V
Collector-emitter breakdown voltage	BVCEO	IC = 2mA	80	-
Emitter-base breakdown voltage	BVEBO	IE = 50A	5	-
Collector cut-off current	ICBO	VCB = 50V	-	500 nA
Emitter cut-off current	IEBO	VEB = 4V	-	500 nA
Collector-emitter saturation voltage	VCE(sat)	IC = 500mA, IB = 50mA	- 200 500	mV
DC current gain	hFE	VCE = 3V, IC = 100mA	120 - 390	-
Transition frequency	fT	VCE = 10V, IE = -50mA, f = 100MHz	- 120	MHz
Output capacitance	Cob	VCB = 10V, IE = 0A, f = 1MHz	- 7.5	pF

Absolute Maximum Ratings

Parameter	Symbol	Values	Unit
Collector-base voltage	VCBO	80	V
Collector-emitter voltage	VCEO	80	V
Emitter-base voltage	VEBO	5	V
Collector current	IC	500	mA
Power dissipation	PD*1	200	mW
Junction temperature	Tj	150
Range of storage temperature	Tstg	-55 to +150