High gain amplifier transistor ROHM 2SD1383KT146B featuring built in resistor and Darlington configuration

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Product Description

Product Overview

The 2SD1383K is a high-gain amplifier transistor featuring a Darlington connection for high DC current gain and a built-in 4k resistor between base and emitter. It complements the 2SB852K and is designed for high gain amplifier applications.

Product Attributes

Brand: ROHM
Origin: Not specified
Material: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Conditions	Value	Unit
Collector-base voltage	VCBO		40	V
Collector-emitter voltage	VCES		32	V
Emitter-base voltage	VEBO		6	V
Collector current	IC		0.3	A
Collector current (Pulsed)	ICP*1	Pw=10ms, duty=1/15	1.5	A
Power dissipation	PD*2	Each terminal mounted on a reference land	200	mW
Junction temperature	Tj		150
Range of storage temperature	Tstg		-55 to +150
Collector-base breakdown voltage	BVCBO	IC = 100A	40	V
Collector-emitter breakdown voltage	BVCES	IC = 1mA, RBE = 0	32	V
Emitter-base breakdown voltage	BVEBO	IE = 100A	6	V
Collector cut-off current	ICBO	VCB = 24V	1.0	A
Emitter cut-off current	IEBO	VEB = 4.5V	1.0	A
Collector-emitter saturation voltage	VCE(sat)*3	IC = 200mA, IB = 0.4mA	1.5	V
DC current gain	hFE*3	VCE = 5V, IC = 100mA	1k	-
Transition frequency	fT*4	VCE = 5V, IE = -10mA, f = 100MHz	250	MHz
Output capacitance	Cob	VCB = 10V, IE = 0A, f = 1MHz	3.0	pF