High speed switching transistor ROHM 2SC5866TLR with 2A collector current and low saturation voltage

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Product Description

2SC5866 Medium Power Transistor

The 2SC5866 is a medium power transistor designed for high-speed switching applications. It features high speed switching with a typical fall time of 35ns at IC=2A, low saturation voltage (typically 200mV at IC=1.0A, IB=100mA), and strong discharge power for inductive and capacitive loads. It complements the 2SA2094 transistor. Applications include low frequency amplifiers and high-speed switching.

Product Attributes

Brand: ROHM
Origin: Not specified
Material: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Conditions	Value (Min)	Value (Typ)	Value (Max)	Unit
Collector-base voltage	VCBO				60	V
Collector-emitter voltage	VCEO				60	V
Emitter-base voltage	VEBO				6	V
Collector current	IC				2	A
Collector current (Pulsed)	ICP*1	Pw=10ms			4	A
Power dissipation	PD*2	Each terminal mounted on a reference land.			0.5	W
Junction temperature	Tj				150
Range of storage temperature	Tstg		-55		+150
Collector-base breakdown voltage	BVCBO	IC = 100A	60			V
Collector-emitter breakdown voltage	BVCEO	IC = 1mA	60			V
Emitter-base breakdown voltage	BVEBO	IE = 100A	6			V
Collector cut-off current	ICBO	VCB = 40V			1.0	A
Emitter cut-off current	IEBO	VEB = 4V			1.0	A
Collector-emitter saturation voltage	VCE(sat)	IC = 1.0A, IB = 100mA		200	500	mV
DC current gain	hFE	VCE = 2V, IC = 100mA	120		390	-
Transition frequency	fT*3	VCE = 10V, IE = -100mA, f = 10MHz		200		MHz
Output capacitance	Cob	VCB = 10V, IE = 0A, f = 1MHz		10		pF
Turn-On time	ton*3	IC = 2A, IB1 = 200mA, IB2 = -200mA, VCC 25V, RL = 12.5 (See test circuit)		50		ns
Storage time	tstg*3			120		ns
Fall time	tf*3			35		ns