Built in bias resistor NPN digital transistor ROHM DTC143TMT2L for switching inverter and interface circuit solutions

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Product Description

Product Overview

The DTC143T series are NPN digital transistors featuring built-in biasing resistors, simplifying circuit design by eliminating the need for external input resistors. These transistors are ideal for configuring inverter circuits and offer advantages such as complete isolation for negative biasing and elimination of parasitic effects. They are suitable for switching, inverter, interface, and driver circuits. Complementary PNP types and complex transistor configurations are also available.

Product Attributes

Brand: ROHM
Type: NPN Digital Transistor (Bias Resistor Built-in)
Certifications: Lead Free/RoHS Compliant

Technical Specifications

Model	Package	VCEO (V)	IC (mA)	R1 (k)	Power Dissipation (mW)	Marking
DTC143TM	VMT3 (SC-105AA)	50	100	4.7	150*1	03
DTC143TEB	EMT3F (SC-89)	50	100	4.7	150*1	03
DTC143TE	EMT3 (SC-85)	50	100	4.7	150*1	03
DTC143TUB	UMT3F (SOT-416/SC-75A)	50	100	4.7	200*1	03
DTC143TUA	UMT3 (SOT-323/SC-70)	50	100	4.7	200*1	03
DTC143TKA	SMT3 (SOT-346/SC-59)	50	100	4.7	200*1	03

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Collector-base voltage	VCBO				50	V
Collector-emitter voltage	VCEO				50	V
Emitter-base voltage	VEBO				5	V
Collector current	IC				100	mA
Collector-base breakdown voltage	BVCBO	IC = 50A	50	-	-	V
Collector-emitter breakdown voltage	BVCEO	IC = 1mA	50	-	-	V
Emitter-base breakdown voltage	BVEBO	IE = 50A	5	-	-	V
Collector cut-off current	ICBO	VCB = 50V	-	-	0.5	A
Emitter cut-off current	IEBO	VEB = 4V	-	-	0.5	A
Collector-emitter saturation voltage	VCE(sat)	IC / IB = 5mA / 0.25mA	-	-	0.15	V
DC current gain	hFE	VCE = 5V, IC = 1mA	100	250	600	-
Input resistance	R1		3.5	4.7	5.9	k
Transition frequency	fT*2	VCE = 10V, IE = -5mA, f = 100MHz	-	250	-	MHz
Junction temperature	Tj				150
Range of storage temperature	Tstg		-55		+150