High reliability dual transistor ROHM EMH2T2R with two independent transistors in compact SOT package
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The EMH2 / UMH2N / IMH2A series are general-purpose dual digital transistors featuring two independent transistor elements within a single package, designed to reduce mounting costs and space. These devices are suitable for automatic mounting machines and are ideal for applications such as inverters, interfaces, and drivers. They offer reliable performance with independent transistor elements that eliminate interference.
Product Attributes
- Brand: ROHM
Technical Specifications
| Model | Package | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking |
|---|---|---|---|---|---|---|---|
| EMH2 | SOT-563 (EMT6) | 1616 | T2R | 180 | 8 | 8000 | H2 |
| UMH2N | SOT-363 (UMT6) | 2021 | TN | 180 | 8 | 3000 | H2 |
| IMH2A | SOT-457 (SMT6) | 2928 | T110 | 180 | 8 | 3000 | H2 |
Absolute Maximum Ratings (Ta = 25C)
| Parameter | Symbol | Values | Unit |
|---|---|---|---|
| For DTr1 and DTr2 in common | |||
| Supply voltage | VCC | 50 | V |
| Input voltage | VIN | -10 to 40 | V |
| Output current | IO | 30 | mA |
| Collector current | IC(MAX)*1 | 100 | mA |
| Power dissipation (EMH2) | PD*2*3 | 150 | mW |
| Power dissipation (UMH2N) | PD*2*3 | 150 | mW |
| Power dissipation (IMH2A) | PD*2*4 | 300 | mW |
| Junction temperature | Tj | 150 | |
| Range of storage temperature | Tstg | -55 to +150 | |
Electrical Characteristics (Ta = 25C)
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| For DTr1 and DTr2 in common | |||||
| Input voltage | VCC = 5V, IO = 100A | - | - | 0.5 | V |
| Input voltage | VO = 0.3V, IO = 2mA | 3.0 | - | - | V |
| Output voltage | IO = 10mA, II = 0.5mA | - | 100 | 300 | mV |
| Input current | VI = 5V | - | - | 180 | A |
| Output current | VCC = 50V, VI = 0V | - | - | 500 | nA |
| DC current gain | VO = 5V, IO = 5mA | 68 | - | - | - |
| Input resistance | R1 | - | 32.9 | 61.1 | k |
| Resistance ratio | R2/R1 | - | 0.8 | 1.2 | - |
| Transition frequency | VCE = 10V, IE = -5mA, f = 100MHz | - | 250 | - | MHz |
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina