Built in Bias Resistor PNP Digital Transistor ROHM DTA043ZUBTL Ideal for Inverter and Driver Circuit Applications
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Product Description
Product Overview
The DTA043Z series is a family of PNP digital transistors with built-in biasing resistors (R1 = 4.7k, R2 = 47k). These transistors simplify circuit design by eliminating the need for external input resistors, enabling inverter circuit configurations with straightforward on/off condition settings. They are suitable for applications such as inverters, interfaces, and drivers. Complementary NPN types are available in the DTC043Z series.
Product Attributes
- Brand: ROHM
- Type: PNP Digital Transistor (Bias Resistor Built-in Transistor)
Technical Specifications
| Model | Package | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking | VCC (MAX) | IC(MAX) | R1 | R2 | Power Dissipation (mW) | Junction Temperature (C) | Storage Temperature Range (C) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DTA043ZM | SOT-723 (VMT3) | 1212 | T2L | 180 | 8 | 8000 | 32 | -50 V | -100 mA | 4.7k | 47k | 150 | 150 | -55 to +150 | |
| DTA043ZEB | SOT-416FL (EMT3F) | 1616 | TL | 180 | 8 | 3000 | 32 | -50 V | -100 mA | 4.7k | 47k | 150 | 150 | -55 to +150 | |
| DTA043ZUB | SOT-323FL (UMT3F) | 2021 | TL | 180 | 8 | 3000 | 32 | -50 V | -100 mA | 4.7k | 47k | 200 | 150 | -55 to +150 | |
| Electrical Characteristics (Ta = 25C) | |||||||||||||||
| Parameter | Conditions | Values (Min.) | Values (Typ.) | Values (Max.) | Unit | ||||||||||
| Input voltage VI(off) | VCC = -5V, IO = -100A | - | - | -0.5 | V | ||||||||||
| Input voltage VI(on) | VO = -0.3V, IO = -5mA | -1.1 | - | - | V | ||||||||||
| Output voltage VO(on) | IO = -5mA, II = -0.5mA | - | -70 | -150 | mV | ||||||||||
| Input current II | VI = -5V | - | - | -1.8 | mA | ||||||||||
| Output current IO(off) | VCC = -50V, VI = 0V | - | - | -500 | nA | ||||||||||
| DC current gain GI | VO = -10V, IO = -5mA | 80 | - | - | - | ||||||||||
| Input resistance R1 | - | - | 3.29 | 6.11 | k | ||||||||||
| Resistance ratio R2/R1 | - | - | 8 | 12 | - | ||||||||||
| Transition frequency fT*1 | VCE = -10V, IE = 5mA, f = 100MHz | - | 250 | - | MHz | ||||||||||
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land.
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