SG2M012075HJ 750V Silicon Carbide MOSFET with Low On Resistance and Temperature Independent Losses
Product Overview
The SG2M012075HJ is a 750V Silicon Carbide (SiC) Power MOSFET from Qingchun Semiconductor (Ningbo) Co., Ltd. Designed for high-speed switching applications, it offers very low switching losses, fully controllable dv/dt, and high blocking voltage with low on-resistance. Its fast intrinsic diode with low reverse recovery (Qrr) and temperature-independent turn-off switching losses contribute to efficiency improvements and reduced cooling requirements. This RoHS compliant and halogen-free component is ideal for on-board chargers/PFC, EV battery chargers, booster/DC-DC converters, and switch-mode power supplies, enabling increased power density and higher system switching frequencies.
Product Attributes
- Brand: Qingchun Semiconductor (Ningbo) Co., Ltd.
- Material: Silicon Carbide (SiC)
- Channel Type: N Channel Enhancement
- Compliance: Halogen free, RoHS compliant
Technical Specifications
| Type | VDS | IDS (TC = 25) | RDS(on), typ (VGS = 18V, ID = 88A, TJ = 25) | TJ,max | Marking | Package |
|---|---|---|---|---|---|---|
| SG2M012075HJ | 750V | 160A | 12m | 175 | SG2M012075HJ | TO-247-4L |
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|---|
| VDS,max | Drain source voltage | 750 | V | VGS = 0V, ID = 100A | |
| VGS,max | Gate source voltage | -8 /+22 | V | Absolute maximum values | Note1 |
| VGSop | Gate source voltage | -4 /+18 | V | Recommended operational values | |
| ID | Continuous drain current | 160 | A | VGS = 18V, TC = 25C | Fig.19 |
| ID | Continuous drain current | 114 | A | VGS = 18V, TC = 100C | |
| ID(pulse) | Pulsed drain current | 320 | A | Pulse width tP limited by TJ,max | Fig.22 |
| PD | Power dissipation | 517 | W | TC= 25C,TJ = 175C | Fig.20 |
| TJ ,Tstg | Operating Junction and storage temperature | -55 to +175 | C | ||
| TL | Soldering temperature | 260 | C | 1.6mm (0.063) from case for 10s | |
| TM | Mounting torque | 1 8.8 | Nm lbf-in | M3 or 6-32 screw | |
| Rth(j-c) | Thermal resistance from junction to case | 0.23 | C/W | Fig.21 | |
| V(BR)DSS | Drain-source breakdown voltage | 750 | V | VGS = 0V, ID = 100A | |
| VGS(th) | Gate threshold voltage | 2.3 | V | VDS = VGS, ID = 26mA | Fig.11 |
| VGS(th) | Gate threshold voltage | 2.8 | V | VDS = VGS, ID = 26mA TJ = 175C | |
| IDSS | Zero gate voltage drain current | 1 | A | VDS = 750V, VGS = 0V | |
| IGSS | Gate source leakage current | 100 | nA | VGS = 18V, VDS = 0V | |
| RDS(on) | Current drain-source on-state resistance | 12 | m | VGS = 18V, ID = 88A | Fig.4,5, 6 |
| RDS(on) | Current drain-source on-state resistance | 20 | m | VGS = 18V, ID = 88A, TJ = 175C | |
| gfs | Transconductance | 70 | S | VDS = 20V, ID = 88A | Fig.7 |
| gfs | Transconductance | 61 | S | VDS = 20V, ID = 88A, TJ = 175C | |
| Rg,int | Internal gate resistance | 2.6 | VAC = 25mV, f = 1MHz, open drain | ||
| Ciss | Input capacitance | 6886 | pF | VDS = 500V, VGS = 0V TJ = 25C, VAC = 25mV f = 100kHz | Fig.17, 18 |
| Coss | Output capacitance | 343 | |||
| Crss | Reverse capacitance | 15 | |||
| Eoss | Coss stored energy | 51 | J | Fig.16 | |
| Qgs | Gate source charge | 73 | nC | VDS = 500V, VGS = -4/+18V ID = 88A | Fig.12 |
| Qgd | Gate drain charge | 51 | |||
| Qg | Gate charge | 214 | |||
| Eon | Turn on switching energy | 1013 | J | VDS = 500V, VGS = -4/+18V ID = 88A, Rg = 2.5 L = 16.7H | Fig.26 |
| Eoff | Turn off switching energy | 461 | |||
| tdon | Turn on delay time | 29 | ns | Fig.27 | |
| tr | Rise time | 44 | |||
| tdoff | Turn off delay time | 58 | |||
| tf | Fall time | 16 | |||
| VSD | Diode forward voltage | 4.3 | V | VGS = -4V, ISD = 44A | Fig.8,9, 10 |
| VSD | Diode forward voltage | 3.9 | V | VGS = -4V, ISD = 44A TJ = 175C | |
| IS | Continuous diode forward current | 108 | A | VGS = -4V, Tc = 25C | Note2 |
| trr | Reverse recovery time | 28 | ns | VR = 500V, VGS = -4V ISD = 88A di/dt = 4283A/s TJ = 175C | |
| Qrr | Reverse recovery charge | 900 | nC | ||
| Irrm | Peak reverse recovery current | 56 | A |
Package Drawing
TO-247-4L-A
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