Digital transistor ROHM EMD62T2R featuring built in bias resistors designed for compact EMT6 package mounting
Product Overview
The EMD62 is a series of complex digital transistors featuring built-in bias resistors, available in both NPN (DTr1) and PNP (DTr2) configurations. These transistors are designed for integration into compact EMT6 packages, offering significant advantages in terms of reduced mounting costs and space. Their independent transistor elements ensure no interference, making them suitable for automatic mounting machines. The EMD62 series is ideal for switching circuits, inverter circuits, interface circuits, and driver circuits.
Product Attributes
- Brand: ROHM
- Package Type: SOT-563 (EMT6)
- Chip Type: DTA044E and DTC044E
Technical Specifications
| Model/Type | Parameter | Value | Unit | |
|---|---|---|---|---|
| EMD62 (DTr1 - NPN) | Supply Voltage (VCC) | 50 | V | |
| Max. Collector Current (IC(MAX)) | 100 | mA | ||
| Built-in Resistor R1 | 47 | k | ||
| Built-in Resistor R2 | 47 | k | ||
| Package Size | 1616 | |||
| Basic Ordering Unit (pcs) | 8000 | |||
| EMD62 (DTr2 - PNP) | Supply Voltage (VCC) | -50 | V | |
| Max. Collector Current (IC(MAX)) | -100 | mA | ||
| Built-in Resistor R1 | 47 | k | ||
| Built-in Resistor R2 | 47 | k | ||
| Package Size | 1616 | |||
| Basic Ordering Unit (pcs) | 8000 | |||
| Absolute Maximum Ratings (Ta = 25C) | Supply voltage (VCC) DTr1(NPN) | 50 | V | |
| Supply voltage (VCC) DTr2(PNP) | -50 | V | ||
| Input voltage (VIN) DTr1(NPN) | 40 to -10 | V | ||
| Input voltage (VIN) DTr2(PNP) | -40 to 10 | V | ||
| Output current (IO) DTr1(NPN) | 30 | mA | ||
| Output current (IO) DTr2(PNP) | -30 | mA | ||
| Collector current (IC(MAX)) DTr1(NPN) | 100 | mA | ||
| Collector current (IC(MAX)) DTr2(PNP) | -100 | mA | ||
| Power Dissipation (PD) | Total | 150 | mW | |
| Per Element (*3) | 120 | mW | ||
| Junction temperature (Tj) | - | 150 | ||
| Storage temperature range (Tstg) | -55 to +150 | |||
| Electrical Characteristics (Ta = 25C) - DTr1(NPN) | Input voltage VI(off) | - | 0.8 | V |
| Input voltage VI(on) | 3.0 | - | V | |
| Output voltage VO(on) | - | 50 to 150 | mV | |
| Input current II | - | 180 | A | |
| Output current IO(off) | - | 500 | nA | |
| DC current gain GI | 80 | - | - | |
| Input resistance R1 | 32.9 to 61.1 | 47 | k | |
| Resistance ratio R2/R1 | 0.8 to 1.2 | 1.0 | - | |
| Transition frequency fT (*1) | - | 250 | MHz | |
| Conditions for VI(off) | VCC = 5V, IO = 100A | |||
| Conditions for VI(on) | VO = 0.3V, IO = 2mA | |||
| Conditions for VO(on) | IO = 5mA, II = 0.5mA | |||
| Electrical Characteristics (Ta = 25C) - DTr2(PNP) | Input voltage VI(off) | - | -0.8 | V |
| Input voltage VI(on) | -3.0 | - | V | |
| Output voltage VO(on) | - | -70 to -150 | mV | |
| Input current II | - | -180 | A | |
| Output current IO(off) | - | -500 | nA | |
| DC current gain GI | 80 | - | - | |
| Input resistance R1 | 32.9 to 61.1 | 47 | k | |
| Resistance ratio R2/R1 | 0.8 to 1.2 | 1.0 | - | |
| Transition frequency fT (*1) | - | 250 | MHz | |
| Conditions for VI(off) | VCC = -5V, IO = -100A | |||
| Conditions for VI(on) | VO = -0.3V, IO = -2mA | |||
| Conditions for VO(on) | IO = -5mA, II = -0.5mA | |||
*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.
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