Compact SOT 723 package NPN transistor Siliup MMBT3904T7 designed for general switching applications

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Product Description

Product Overview

The MMBT3904T7 is a general-purpose NPN silicon transistor designed for switching applications. It features a collector-emitter voltage of 40V and a collector current of 0.2A, making it suitable for various electronic circuits. This transistor is supplied in a compact SOT-723 package.

Product Attributes

Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
Type: NPN Silicon Transistor
Model: MMBT3904T7
Package: SOT-723

Technical Specifications

Parameter	Symbol	Test Condition	Min	Max	Unit
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Collector-Emitter Voltage	VCEO			40	V
Collector-Base Voltage	VCBO			60	V
Emitter-Base Voltage	VEBO			6	V
Collector Current	IC			200	mA
Power Dissipation	Ptot			100	mW
Thermal Resistance from Junction to Ambient	RJA			1250	/W
Junction Temperature	Tj			150
Storage Temperature Range	Tstg		-55	+150
Electrical Characteristics (TA=25 oC, unless otherwise noted)
Collector-emitter breakdown voltage	BVCEO	IC=1mA , IB=0	40		V
Collector-base breakdown voltage	BVCBO	IC=10A ,IE=0	60		V
Emitter-base breakdown voltage	BVEBO	IE=10A,IC=0	6		V
Collector cut-off current	ICEX	VCE=30V,VEB(off)=3V		50	nA
Emitter cut-off current	IEBO	VEB=5V,IC=0		100	nA
DC current gain	hFE	VCE=1V,IC=0.1mA	40
		VCE=1V,IC=1mA	70
		VCE=1V,IC=10mA		100
		VCE=1V,IC=50mA		300
Collector-emitter saturation voltage	VCE(sat)	IC=10mA,IB=1mA		0.2	V
Collector-emitter saturation voltage	VCE(sat)	IC=50mA,IB=5mA		0.3	V
Base-emitter saturation voltage	VBE(sat)	IC=10mA,IB=1mA	0.65	0.85	V
Base-emitter saturation voltage	VBE(sat)	IC=50mA,IB=5mA		0.95	V
Transition frequency	fT	VCE=20V,IC=10mA,f=100MHz		300	MHZ

SOT-723 Package Information
Symbol	Dimensions In Millimeters
A	Min	0.430
	Max	0.500
A1	Min	0.000
	Max	0.050
b	Min	0.170
	Max	0.270
b1	Min	0.270
	Max	0.370
C	Min	0.080
	Max	0.150
D	Min	1.150
	Max	1.250
E	Min	1.150
	Max	1.250
E1	Min	0.750
	Max	0.850
e	Typ.	0.800
	Ref.	7