NPN Silicon Transistor Siliup MMBT3904T2 with Compact SOT23 Package and 0.2A Collector Current

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Product Description

Product Overview

The MMBT3904T2 is a general-purpose NPN silicon transistor designed for switching applications. It offers a collector-emitter voltage of 40V and a collector current of 0.2A, making it suitable for various electronic circuits. This transistor comes in a compact SOT-23 package.

Product Attributes

Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
Product Type: General Purpose Transistor
Material: Silicon
Polarity: NPN
Marking: MMBT3904T2

Technical Specifications

Parameter	Symbol	Test Condition	Min	Max	Unit
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Collector Emitter Voltage	VCEO			40	V
Collector Base Voltage	VCBO			60	V
Emitter Base Voltage	VEBO			6	V
Collector Current	IC			200	mA
Power Dissipation	Ptot			100	mW
Thermal Resistance from Junction to Ambient	RJA			1250	/W
Junction Temperature	Tj			150
Storage Temperature Range	Tstg		-55	+150
Electrical Characteristics (TA=25 oC, unless otherwise noted)
Collector-emitter breakdown voltage	BVCEO	IC=1mA , IB=0	40		V
Collector-base breakdown voltage	BVCBO	IC=10A ,IE=0	60		V
Emitter-base breakdown voltage	BVEBO	IE=10A,IC=0	6		V
Collector cut-off current	ICEX	VCE=30V,VEB(off)=3V		50	nA
Emitter cut-off current	IEBO	VEB=5V,IC=0		100	nA
DC current gain	hFE	VCE=1V,IC=0.1mA	40
		VCE=1V,IC=1mA	70
		VCE=1V,IC=10mA	100	300
		VCE=1V,IC=50mA	60
Collector-emitter saturation voltage	VCE(sat)	IC=10mA,IB=1mA		0.2	V
Collector-emitter saturation voltage	VCE(sat)	IC=50mA,IB=5mA		0.3	V
Base-emitter saturation voltage	VBE(sat)	IC=10mA,IB=1mA	0.65	0.85	V
Base-emitter saturation voltage	VBE(sat)	IC=50mA,IB=5mA		0.95	V
Transition frequency	fT	VCE=20V,IC=10mA,f=100MHz		300	MHZ
Package Information: SOT-23
Symbol	Dimensions In Millimeters	Min.	Max.
A		0.90	1.15
A1		0.00	0.10
A2		0.90	1.05
b		0.30	0.50
c		0.08	0.15
D		2.80	3.00
E		1.20	1.40
E1		2.25	2.55
e		0.95 REF.
e1		1.80	2.00
L		0.55 REF.
L1		0.30	0.50
		0o	8o