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China 60V N Channel MOSFET Siliup SP60N02BGNK with Low Gate Charge and Tested Single Pulse Avalanche Energy for sale

60V N Channel MOSFET Siliup SP60N02BGNK with Low Gate Charge and Tested Single Pulse Avalanche Energy

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The SP60N02BGNK is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for hard switched and high-frequency circuits, as well as uninterruptible power supplies. It is available in a PDFN5X6-8L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Type: N-Channel Power MOSFET
  • Package: PDFN5X6-8L
  • Technology: Advanced Split Gate Trench Technology

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
V(BR)DSS V(BR)DSS 60 V
RDS(on) RDS(on) 10V 2.3 m
RDS(on) RDS(on) 4.5V 2.7 m
ID ID 120 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current (Tc=25C) ID (Tc=25C) 120 A
Continuous Drain Current (Tc=100C) ID (Tc=100C) 80 A
Pulse Drain Current IDM Tested 480 A
Single Pulse Avalanche Energy EAS 635 mJ
Power Dissipation (Tc=25C) PD (Tc=25C) 120 W
Thermal Resistance Junction-to-Case RJC 1.04 C/W
Maximum Junction Temperature TJ -55 150 C
Storage Temperature Range TSTG -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250mA 60 - - V
Zero Gate Voltage Drain Current IDSS VDS=48V, VGS=0V - - 1 uA
Gate Leakage Current IGSS VGS=20V, VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 1.2 1.7 2.2 V
Drain-Source On-state Resistance RDS(ON) VGS=10V, ID=40A - 2.3 2.9 m
Drain-Source On-state Resistance RDS(ON) VGS=4.5V, ID=40A - 2.7 4.3 m
Dynamic Characteristics
Input Capacitance Ciss VGS=0V, VDS=30V, F=1MHz - 5441 - pF
Output Capacitance Coss - 2201 - pF
Reverse Transfer Capacitance Crss - 136 - pF
Total Gate Charge Qg VDS=30V, VGS=10V, ID=30A - 101 - nC
Gate-Source Charge Qgs - 17 -
Gate-Drain Charge Qgd - 21 -
Switching Characteristics
Turn-On Delay Time td(on) VDD=30V, ID=30A, VGS=10V, RG=3 - 15 - nS
Rise Time tr - 34 -
Turn-Off Delay Time td(off) - 76 -
Fall Time tf - 95 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 120 A
Reverse Recovery Time trr IS=20 A,di/dt=100 A/sTJ=25 - 45 - nS
Reverse Recovery Charge Qrr - 41 - nC
Package Information (PDFN5X6-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.900 - 1.000 0.035 - 0.039
A3 0.254REF. 0.010REF.
D 4.944 - 5.096 0.195 - 0.201
E 5.974 - 6.126 0.235 - 0.241
D1 3.910 - 4.110 0.154 - 0.162
E1 3.375 - 3.575 0.133 - 0.141
D2 4.824 - 4.976 0.190 - 0.196
E2 5.674 - 5.826 0.223 - 0.229
k 1.190 - 1.390 0.047 - 0.055
b 0.350 - 0.450 0.014 - 0.018
e 1.270TYP. 0.050TYP.
L 0.559 - 0.711 0.022 - 0.028
L1 0.424 - 0.576 0.017 - 0.023
H 0.574 - 0.726 0.023 - 0.029
10 - 12 10 - 12

Order Information

Device Package Unit/Tape
SP60N02BGNK PDFN5X6-8L 5000

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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