40V N Channel Power MOSFET Siliup SP40N02GNK with Low Gate Charge and High Continuous Current
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Product Description
Product Overview
The SP40N02GNK is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. This device features fast switching speed, low Gate Charge, and low Rdson, enabled by advanced Split Gate Trench Technology. It is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC Converters, Motor Control, and portable equipment.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP40N02GNK
- Device Code: 40N02G
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: PDFN5X6-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 40 | V | |||
| RDS(on) Typ | @10V | 1.9 | m | |||
| RDS(on) Typ | @4.5V | 2.7 | m | |||
| Continuous Drain Current | ID | 120 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25) | 40 | V | ||
| Gate-Source Voltage | VGSS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25C) | 120 | A | ||
| Continuous Drain Current | ID | (Tc=100C) | 80 | A | ||
| Pulse Drain Current | IDM | (Tested) | 480 | A | ||
| Single pulsed avalanche energy | EAS | 529 | mJ | |||
| Power Dissipation | PD | (Tc=25C) | 100 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 1.25 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =30A | - | 1.9 | 2.4 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =20A | - | 2.7 | 3.6 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 3200 | - | pF |
| Output Capacitance | Coss | - | 1880 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 65 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=30A | - | 54 | - | nC |
| Gate-Source Charge | Qgs | - | 9.5 | - | ||
| Gate-Drain Charge | Qg d | - | 11 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=20 VGS=10V , RG=1.6, ID=65A | - | 9.5 | - | nS |
| Rise Time | Tr | - | 3 | - | ||
| Turn-Off Delay Time | Td(off) | - | 33 | - | ||
| Fall Time | Tf | - | 4 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Diode Continuous Current | IS | - | - | 120 | A | |
| Reverse recovery time | Trr | IS=40A, di/dt=100A/us, Tj=25 | - | 46 | - | nS |
| Reverse recovery charge | Qrr | - | 85 | - | nC | |
| Package Information (PDFN5X6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 | 1.000 | 0.035 | 0.039 | ||
| A3 | 0.254REF. | 0.010REF. | ||||
| D | 4.944 | 5.096 | 0.195 | 0.201 | ||
| E | 5.974 | 6.126 | 0.235 | 0.241 | ||
| D1 | 3.910 | 4.110 | 0.154 | 0.162 | ||
| E1 | 3.375 | 3.575 | 0.133 | 0.141 | ||
| D2 | 4.824 | 4.976 | 0.190 | 0.196 | ||
| E2 | 5.674 | 5.826 | 0.223 | 0.229 | ||
| k | 1.190 | 1.390 | 0.047 | 0.055 | ||
| b | 0.350 | 0.450 | 0.014 | 0.018 | ||
| e | 1.270TYP. | 0.050TYP. | ||||
| L | 0.559 | 0.711 | 0.022 | 0.028 | ||
| L1 | 0.424 | 0.576 | 0.017 | 0.023 | ||
| H | 0.574 | 0.726 | 0.023 | 0.029 | ||
| 10 | 12 | 10 | 12 | |||
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