High current capacity N channel MOSFET SANKEN 2SK3710 for power management and motor drive circuits
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Product Description
Product Overview
The SANKEN ELECTRIC 2SK3710 is a high-performance N-channel MOSFET designed for demanding applications. It features exceptionally low on-state resistance (5.0m at VGS=10V) and a built-in gate protection diode for enhanced reliability. This device is suitable for DC-DC converters and motor drive applications, offering efficient power management and robust operation.
Product Attributes
- Brand: SANKEN ELECTRIC
- Model: 2SK3710
- Package: TO220S
- Internal Equivalent Circuit: N-channel MOSFET with gate protection diode
- Note: Not Recommended for New Designs
Technical Specifications
| Characteristic | Symbol | Rating | Unit | Conditions |
|---|---|---|---|---|
| Drain to Source Voltage | VDSS | 60 | V | (ID=100uA) |
| Gate to Source Voltage | VGSS | 20 | V | |
| Continuous Drain Current | ID | 85 | A | (Tc=25C) |
| Pulsed Drain Current | ID(pulse) | 170 | A | *1 |
| Maximum Power Dissipation | PD | 100 | W | (Tc=25C) |
| Single Pulse Avalanche Energy | EAS | 400 | mJ | *2 |
| Maximum avalanche current | IAS | 25 | A | |
| Channel Temperature | Tch | 150 | C | |
| Storage Temperature | Tstg | -55 ~ +150 | C | |
| Maximum Drain to Source dv/dt 1 | dv/dt 1 | 0.5 | V/ns | *2 |
| Peak diode recovery dv/dt 2 | dv/dt 2 | 3 | V/ns | *3 |
| Peak diode recovery di/dt | di/dt | 100 | A/s | *3 |
| Drain to Source Breakdown Voltage | V(BR)DSS | 60 | V | ID=100A, VGS=0V |
| Gate to Source Leakage Current | IGSS | 10 | A | VGS=15V |
| Drain to Source Leakage Current | IDSS | 100 | A | VDS=60V, VGS=0V |
| Gate Threshold Voltage | VTH | 2.0 ~ 4.0 | V | VDS=10V, ID=1mA |
| Forward Transconductance | Re(yfs) | 30 ~ 80 | S | VDS=10V, ID=35A |
| Static Drain to Source On-Resistance | RDS(ON) | 5.0 ~ 6.0 | m | ID=35A, VGS=10V |
| Input Capacitance | Ciss | 8400 | pF | VDS=10V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | 1200 | pF | VDS=10V, VGS=0V, f=1MHz |
| Reverse Transfer Capacitance | Crss | 930 | pF | VDS=10V, VGS=0V, f=1MHz |
| Turn-On Delay Time | td(on) | 160 | ns | ID=35A, VDD=20V, RG=22, RGS=50, RL=0.57, VGS=10V (See Fig.3) |
| Rise Time | tr | 170 | ns | ID=35A, VDD=20V, RG=22, RGS=50, RL=0.57, VGS=10V (See Fig.3) |
| Turn-Off Delay Time | td(off) | 430 | ns | ID=35A, VDD=20V, RG=22, RGS=50, RL=0.57, VGS=10V (See Fig.3) |
| Fall Time | tf | 185 | ns | ID=35A, VDD=20V, RG=22, RGS=50, RL=0.57, VGS=10V (See Fig.3) |
| Source-Drain Diode Forward Voltage | VSD | 0.9 ~ 1.5 | V | ISD=50A, VGS=0V |
| Source-Drain Diode Reverse Recovery Time | trr | 65 | ns | ISD=25A, di/dt=50A/s |
| Thermal Resistance Junction to Case | Rth(ch-c) | 1.25 | C/W | |
| Thermal Resistance Junction to Ambient | Rth(ch-a) | 62.5 | C/W | |
| Weight | Approx. 1.4 | g |
*1 PW100sec. duty cycle1
*2 VDD=20V, L=1mH, IL=25A, unclamped, Rg=50See Fig.1
*3 ISD=25ASee Fig.2
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