85V N Channel Power MOSFET Siliup SP85N02GHTO Featuring Split Gate Trench Technology for Switching
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Product Description
Product Overview
The SP85N02GHTO is an 85V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is designed for demanding applications including PWM applications, hard switched, and high-frequency circuits, as well as power management. It is 100% tested for single pulse avalanche energy, ensuring reliability in critical systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP85N02GHTO
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: TOLL
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Condition |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage | V(BR)DSS | 85 | V | |
| RDS(on) Typ. | RDS(on)TYP | 2.1 | m@10V | |
| Continuous Drain Current | ID | 230 | A | |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDS | 85 | V | (Ta=25 unless otherwise noted) |
| Gate-Source Voltage | VGS | ±20 | V | (Ta=25 unless otherwise noted) |
| Continuous Drain Current (Tc=25) | ID | 230 | A | (Ta=25 unless otherwise noted) |
| Continuous Drain Current (Tc=100) | ID | 153 | A | (Ta=25 unless otherwise noted) |
| Pulsed Drain Current | IDM | 920 | A | (Ta=25 unless otherwise noted) |
| Single Pulse Avalanche Energy | EAS | 756 | mJ | (Ta=25 unless otherwise noted) |
| Power Dissipation (Tc=25) | PD | 285 | W | (Ta=25 unless otherwise noted) |
| Thermal Resistance Junction-to-Case | RJC | 0.44 | /W | (Ta=25 unless otherwise noted) |
| Storage Temperature Range | TSTG | -55 to 150 | (Ta=25 unless otherwise noted) | |
| Operating Junction Temperature Range | TJ | -55 to 150 | (Ta=25 unless otherwise noted) | |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 85 | V | ID = 250A, VGS = 0V |
| Drain Cut-Off Current | IDSS | - | A | VDS = 68V, VGS = 0V |
| Gate Leakage Current | IGSS | - | ±0.1 | VGS = ±20V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | 2.0 | V | VDS = VGS, ID = 250A |
| Drain-Source ON Resistance | RDS(ON) | - | 2.6 | VGS = 10V, ID = 20A |
| Input Capacitance | Ciss | - | 6421 | VDS =40V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | - | 1226 | VDS =40V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | - | 24 | VDS =40V, VGS = 0V, f = 1.0MHz |
| Total Gate Charge | Qg | - | 94 | VDS=40V , VGS=10V , ID=130A |
| Gate-Source Charge | Qgs | - | 33.5 | VDS=40V , VGS=10V , ID=130A |
| Gate-Drain Charge | Qg d | - | 19.5 | VDS=40V , VGS=10V , ID=130A |
| Turn-On Delay Time | td(on) | - | 27 | VGS = 10V, VDS = 40V, ID=130A , RG = 1.6 |
| Rise Time | tr | - | 35 | VGS = 10V, VDS = 40V, ID=130A , RG = 1.6 |
| Turn-Off Delay Time | td(off) | - | 62 | VGS = 10V, VDS = 40V, ID=130A , RG = 1.6 |
| Fall Time | tf | - | 32 | VGS = 10V, VDS = 40V, ID=130A , RG = 1.6 |
| Drain-Source Body Diode Characteristics | ||||
| Source-Drain Diode Forward Voltage | VSD | - | 1.2 | IS = 1A, VGS = 0V |
| Maximum Body-Diode Continuous Current | IS | - | 230 | IS = 1A, VGS = 0V |
| Reverse Recovery Time | Trr | - | 112 | IS=20A, di/dt=100A/us, TJ=25 |
| Reverse Recovery Charge | Qrr | - | 225 | IS=20A, di/dt=100A/us, TJ=25 |
| TOLL Package Dimensions (mm) | ||||
| A | 2.20 - 2.40 | mm | ||
| b | 0.65 - 0.85 | mm | ||
| C | 0.508 REF | mm | ||
| D | 10.25 - 10.55 | mm | ||
| D1 | 2.85 - 3.15 | mm | ||
| E | 9.75 - 10.05 | mm | ||
| E1 | 9.65 - 9.95 | mm | ||
| E2 | 8.95 - 9.25 | mm | ||
| E3 | 7.25 - 7.55 | mm | ||
| e | 1.20 BSC | mm | ||
| F | 1.05 - 1.35 | mm | ||
| H | 11.55 - 11.85 | mm | ||
| H1 | 6.03 - 6.33 | mm | ||
| H2 | 6.85 - 7.15 | mm | ||
| H3 | 3.00 BSC | mm | ||
| L | 1.55 - 1.85 | mm | ||
| L1 | 0.55 - 0.85 | mm | ||
| L2 | 0.45 - 0.75 | mm | ||
| M | 0.08 REF | mm | ||
| β | 8° - 12° | |||
| K | 4.25 - 4.55 | mm | ||
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