Power MOSFET Siliup SP020N18GHTQ 200V N Channel with Low On Resistance and Fast Switching Capability
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Product Description
Product Overview
The SP020N18GHTQ is a 200V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, DC-DC converters, and power management systems. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP020N18GHTQ
- Channel Type: N-Channel
- Package: TO-220-3L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 200 | V | ||||
| RDS(on)TYP | @10V | 18 | m | |||
| ID | 70 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 200 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 70 | A | |||
| Continuous Drain Current (Tc=100) | ID | 47 | A | |||
| Pulsed Drain Current | IDM | 280 | A | |||
| Single Pulse Avalanche Energy | EAS | 1 | 840 | mJ | ||
| Power Dissipation (Tc=25) | PD | 300 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.42 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 200 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=160V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2 | 3 | 4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V , ID=20A | - | 18 | 22.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=100V , VGS=0V , f=1MHz | - | 3264 | - | pF |
| Output Capacitance | Coss | - | 197 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 14 | - | pF | |
| Total Gate Charge | Qg | VDS=100V , VGS=10V , ID=35A | - | 42.9 | - | nC |
| Gate-Source Charge | Qgs | - | 19 | - | ||
| Gate-Drain Charge | Qg d | - | 6.9 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=100V, VGS=10V , RG=10, ID=35A | - | 45 | - | nS |
| Rise Time | tr | - | 46 | - | ||
| Turn-Off Delay Time | td(off) | - | 79 | - | ||
| Fall Time | tf | - | 19 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 70 | A | |
| Reverse Recovery Time | Trr | IS=35A, di/dt=100A/us, TJ=25 | - | 136 | - | nS |
| Reverse Recovery Charge | Qrr | - | 393 | - | nC | |
| Package Information (TO-220-3L Dimensions in Millimeters) | ||||||
| Symbol | Min. | Max. | ||||
| A | 2.700 | 2.900 | ||||
| B | 6.400 | 6.800 | ||||
| C | 0.300 | 0.700 | ||||
| D | 11 | 15 | ||||
| E | 1.1 | 1.5 | ||||
| F | 0.7 | 0.9 | ||||
| G | 2.54TYP | |||||
| W | 9.8 | 10.2 | ||||
| H | 4.3 | 4.7 | ||||
| H1 | 2.2 | 2.5 | ||||
| K | 2.7 | 3.1 | ||||
| L | 14.8 | 16.8 | ||||
| L1 | 9.0 | 9.4 | ||||
| N | 1.2 | 1.4 | ||||
| P | 12.7 | 13.3 | ||||
| P1 | 7.6 | 8.2 | ||||
| Q | 3.5 | 3.7 | ||||
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