Low switching loss diode ROHM RF071M2STR featuring silicon epitaxial planar design for rectification

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Product Description

ROHM RF071M2S Super Fast Recovery Diode

The ROHM RF071M2S is a super fast recovery diode series designed for general rectification applications. It features ultra-low forward voltage and low switching loss, making it suitable for applications requiring efficient power conversion. The diode is constructed using a silicon epitaxial planar type process.

Product Attributes

Brand: ROHM
Series: RF071M
Construction: Silicon epitaxial planar type
Manufacture Code: PMDU
JEITA Code: SOD-123

Technical Specifications

Parameter	Conditions	Min.	Typ.	Max.	Unit
Repetitive peak reverse voltage	VRM			200	V
Reverse voltage	VR			200	V
Direct forward current	IF			1	A
Average rectified forward current	Io			0.7	A
Non-repetitive forward surge current	IFSM	60Hz half sin wave ,Non-repetitive at Tj=25C		20	A
Operating junction temperature	Tj	-55		+150	C
Storage temperature	Tstg	-55		+150	C
Forward voltage	VF	IF=0.5A		0.85	V
Reverse current	IR	VR=200V		10	µA
Reverse recovery time	trr	IF=0.5A, IR=1A, Irr=0.25×IR	12	25	ns
Thermal resistance	Rth(j-l)	Junction to lead		20	°C / W
Capacitance between terminals	Ct	f = 1MHz, Ta = 25°C, VR = 0V		10	pF