Siliup SP10HF25TF TO247 Package MOSFET Featuring Low Rdson and High Frequency Performance for Power Management
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP10HF25TF is a 250V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers fast switching, low gate charge, and low Rdson, making it suitable for PWM applications, hard switched and high frequency circuits, and power management. The device is 100% single pulse avalanche energy tested and comes in a TO-247 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP10HF25TF
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 250 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 160 | A | |||
| Continuous Drain Current (Tc=100) | ID | 107 | A | |||
| Pulsed Drain Current | IDM | 640 | A | |||
| Single Pulse Avalanche Energy | EAS | 1406 | mJ | |||
| Power Dissipation (Tc=25) | PD | 445 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.28 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0 V , ID=250uA | 250 | 285 | - | V |
| Drain-Source Leakage Current | IDSS | VDS=200V , VGS=0V , TJ=25 | - | - | 10 | uA |
| Gate-Source Leakage Current | IGSS | VGS=±20V , VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 3 | 4 | 5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=40A | - | 10 | 12.5 | m |
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 5130 | - | pF |
| Output Capacitance | Coss | - | 351 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 21 | - | pF | |
| Total Gate Charge | Qg | VDS=200V , VGS=0-10V , ID=40A | - | 85 | - | nC |
| Gate-Source Charge | Qgs | - | 28 | - | ||
| Gate-Drain Charge | Qgd | - | 22 | - | ||
| Turn-On Delay Time | Td(on) | VDD=200V, VGS=10V , RG=1.6, ID=40A | - | 33 | - | nS |
| Rise Time | Tr | - | 15 | - | ||
| Turn-Off Delay Time | Td(off) | - | 75 | - | ||
| Fall Time | Tf | - | 8 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 160 | A | |
| Reverse recover time | Trr | IS=40A, di/dt=100A/us, Tj=25 | - | 119 | - | nS |
| Reverse recovery charge | Qrr | - | 0.55 | - | nC | |
| TO-247 Package Information (Dimensions in Millimeters) | |||
|---|---|---|---|
| Symbol | Min. | Max. | Unit |
| A | 4.850 | 5.150 | |
| A1 | 2.200 | 2.600 | |
| b2 | 1.800 | 2.200 | |
| b | 1.000 | 1.400 | |
| b1 | 2.800 | 3.200 | |
| c | 0.500 | 0.700 | |
| c1 | 1.900 | 2.100 | |
| D | 15.450 | 15.750 | |
| E1 | 3.500 | REF. | |
| E2 | 3.600 | REF. | |
| L | 40.900 | 41.300 | |
| L1 | 24.800 | 25.100 | |
| L2 | 20.300 | 20.600 | |
| 7.100 | 7.300 | ||
| e | 5.450 | TYP. | |
| H1 | 5.980 | REF. | |
| h | 0.000 | 0.300 | |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina