Power Switching MOSFET Siliup SP40N01GNK 40V N Channel Device with Low RDSon and PDFN5X6 8L Package
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Negotiable
MOQ:
Negotiable
Delivery Time:
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Product Description
Product Overview
The SP40N01GNK is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications and DC-DC converters. It comes in a PDFN5X6-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP40N01GNK
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: PDFN5X6-8L
- Device Code: SP40N01GNK
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 40 | V | ||||
| RDS(on) TYP | @10V | 1.1 | m | |||
| RDS(on) TYP | @4.5V | 1.7 | m | |||
| ID | 120 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) Silicon Limit | ID | 230 | A | |||
| Continuous Drain Current (Tc=25) Package Limit | ID | 120 | A | |||
| Continuous Drain Current (Tc=100) | ID | 80 | A | |||
| Pulsed Drain Current | IDM | 480 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 1089 | mJ | |||
| Power Dissipation (Tc=25) | PD | 130 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.96 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 40 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=32V, VGS=0V, TJ=25 | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =250uA | 1.0 | 1.8 | 2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V, ID=20A | - | 1.1 | 1.35 | m |
| Drain-Source ON Resistance | RDS(ON) | VGS=4.5V, ID=10A | - | 1.7 | 2.3 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V, VGS=0V, f=1MHz | - | 5500 | - | pF |
| Output Capacitance | Coss | - | 1850 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 65 | - | pF | |
| Total Gate Charge | Qg | VDS=20V, VGS=10V, ID=85A | - | 126 | - | nC |
| Gate-Source Charge | Qgs | - | 19 | - | nC | |
| Gate-Drain Charge | Qgd | - | 12 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=20V, VGS=10V, RG=1.6, ID=85A | - | 14 | - | nS |
| Rise Time | tr | - | 8 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 56 | - | nS | |
| Fall Time | tf | - | 10 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 120 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 68 | - | nS |
| Reverse Recovery Charge | Qrr | - | 50 | - | nC | |
| Package Information (PDFN5X6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 | 1.000 | 0.035 | 0.039 | ||
| A3 | 0.254REF. | 0.010REF. | ||||
| D | 4.944 | 5.096 | 0.195 | 0.201 | ||
| E | 5.974 | 6.126 | 0.235 | 0.241 | ||
| D1 | 3.910 | 4.110 | 0.154 | 0.162 | ||
| E1 | 3.375 | 3.575 | 0.133 | 0.141 | ||
| D2 | 4.824 | 4.976 | 0.190 | 0.196 | ||
| E2 | 5.674 | 5.826 | 0.223 | 0.229 | ||
| k | 1.190 | 1.390 | 0.047 | 0.055 | ||
| b | 0.350 | 0.450 | 0.014 | 0.018 | ||
| e | 1.270TYP. | 0.050TYP. | ||||
| L | 0.559 | 0.711 | 0.022 | 0.028 | ||
| L1 | 0.424 | 0.576 | 0.017 | 0.023 | ||
| H | 0.574 | 0.726 | 0.023 | 0.029 | ||
| 10 | 12 | 10 | 12 | |||
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