AEC Q101 qualified RUILON 2N5551 high voltage transistor with PPAP capability and halogen free materials

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Price: Negotiable

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Product Description

Product Overview

High Voltage Transistors designed for automotive and general applications requiring unique site and control change requirements. These transistors are AEC-Q101 qualified and PPAP capable, offering RoHS compliance and Halogen Free materials.

Product Attributes

RoHS Compliant
Halogen Free
AEC-Q101 Qualified
PPAP Capable

Technical Specifications

Parameter	Symbol	Min.	Typ.	Max.	Unit	Notes
MAXIMUM RATINGS (Ta = 25C)
Collector current--Continuous	IC	-	-	600	mA
Collector-Emitter Voltage	VCEO	-	-	160	V
Collector-Base voltage	VCBO	-	-	180	V
Emitter-Base Voltage	VEBO	-	-	6.0	V
Total Device Dissipation, FR5 Board	PD	-	225	-	mW	@ TA = 25C, Derate above 25C 556 mW/
Thermal Resistance, JunctiontoAmbient (FR-5 Board)	RJA	-	417	-	/W	FR5 = 1.00.750.062 in.
Total Device Dissipation, Alumina Substrate	PD	-	556	-	mW	@ TA = 25C, Derate above 25C 1.8 mW/
Thermal Resistance, JunctiontoAmbient (Alumina Substrate)	RJA	-	1.8	-	/W	Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Junction and Storage temperature	TJ,Tstg	-55	-	+150
ELECTRICAL CHARACTERISTICS (Ta= 25C)
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage	V(BR)CEO	160	-	-	V	(IC = 1.0 mA, IB = 0)
Collector-Base Breakdown voltage	V(BR)CBO	180	-	-	V	(IC = 100A, IE = 0)
Emitter-Base Breakdown Voltage	V(BR)EBO	6.0	-	-	V	(IE = 10 A, IC = 0)
Collector Cutoff Current	ICBO	-	-	50	nA	(VCB = 120 V, IE = 0)
Collector Cutoff Current @ 100C	ICBO	-	-	100	nA	(VCB = 120 V, IE = 0, TA = 100C)
Emitter Cutoff Current	IEBO	-	-	50	nA	(VEB = 4.0 V, IC = 0)
Collector Emitter Cut-off Current	ICES	-	-	50	nA	(VCB = 10 V)
Collector Emitter Cut-off Current	ICES	-	-	50	nA	(VCB = 75 V)
ON CHARACTERISTICS
DC Current Gain	HFE	-	50	-		(IC = 1.0 mA, VCE = 5.0 V)
DC Current Gain	HFE	-	80	250		(IC = 10 mA, VCE = 5.0 V)
DC Current Gain	HFE	-	-	50		(IC = 50 mA, VCE = 5.0 V)
Collector-Emitter Saturation Voltage	VCE(S)	-	-	0.15	V	(IC = 10 mA, IB = 1.0 mA)
Collector-Emitter Saturation Voltage	VCE(S)	-	-	0.2	V	(IC = 50 mA, IB = 5.0 mA)
Base-Emitter Saturation Voltage	VBE(S)	-	-	1.0	V	(IC = 10 mA, IB = 1.0 mA)
Base-Emitter Saturation Voltage	VBE(S)	-	-	1.1	V	(IC = 50 mA, IB = 5.0 mA)
DEVICE MARKING AND ORDERING INFORMATION
Part Number	Device Marking	Shipping	Parameter	Limits	Unit
2N5551LT3G	G1	10000/Tape&Reel	RJA	417	/W
2N5551LT3G	G1	10000/Tape&Reel	PD	225	mW
2N5551LT1G	G1	3000/Tape&Reel	PD	300	mW
2N5551LT1G	G1	3000/Tape&Reel	VCEO	160	V
2N5551LT1G	G1	3000/Tape&Reel	IC	600	mA