Power management MOSFET Siliup SP60P11NK 60V P Channel with fast switching and surface mount package
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Product Description
Product Overview
The SP60P11NK is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching speeds and a surface mount PDFN5X6-8L package. This ROHS Compliant & Halogen-Free component is 100% Single Pulse avalanche energy Tested and is suitable for applications such as DC-DC Converters and Motor Control.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP60P11NK
- Package Type: PDFN5X6-8L
- Compliance: ROHS Compliant & Halogen-Free
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -60 | V | |||
| RDS(on) | @-10V | 11 | m | |||
| RDS(on) | @-4.5V | 14 | m | |||
| Continuous Drain Current | ID | -70 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | -70 | A | |||
| Continuous Drain Current (Tc=100C) | ID | -47 | A | |||
| Pulse Drain Current Tested | IDM | -280 | A | |||
| Single pulsed avalanche energy | EAS | 506 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 135 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.93 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -60 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-48V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID=-250uA | -1 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-20A | 11 | 15 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-20A | 14 | 18.5 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-30V , VGS=0V , f=1MHz | 7700 | pF | ||
| Output Capacitance | Coss | 489 | pF | |||
| Reverse Transfer Capacitance | Crss | 364 | pF | |||
| Total Gate Charge | Qg | VDS=-30V , VGS=-10V , ID=-20A | 85.5 | nC | ||
| Gate-Source Charge | Qgs | 12.1 | ||||
| Gate-Drain Charge | Qg | 23.2 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-30V VGS=-10V , RG=3, ID=-30A | 9.8 | nS | ||
| Rise Time | Tr | 6.1 | ||||
| Turn-Off Delay Time | Td(off) | 44 | ||||
| Fall Time | Tf | 12.7 | ||||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Diode Continuous Current | IS | -70 | A | |||
| Reverse recovery time | Trr | IS=-20A, di/dt=-100A/us, Tj=25 | 50 | nS | ||
| Reverse recovery charge | Qrr | 69 | nC | |||
| Package Information (PDFN5X6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 0.900 | 1.000 | 0.035 | 0.039 | ||
| A3 | 0.254REF. | 0.010REF. | ||||
| D | 4.944 | 5.096 | 0.195 | 0.201 | ||
| E | 5.974 | 6.126 | 0.235 | 0.241 | ||
| D1 | 3.910 | 4.110 | 0.154 | 0.162 | ||
| E1 | 3.375 | 3.575 | 0.133 | 0.141 | ||
| D2 | 4.824 | 4.976 | 0.190 | 0.196 | ||
| E2 | 5.674 | 5.826 | 0.223 | 0.229 | ||
| k | 1.190 | 1.390 | 0.047 | 0.055 | ||
| b | 0.350 | 0.450 | 0.014 | 0.018 | ||
| e | 1.270TYP. | 0.050TYP. | ||||
| L | 0.559 | 0.711 | 0.022 | 0.028 | ||
| L1 | 0.424 | 0.576 | 0.017 | 0.023 | ||
| H | 0.574 | 0.726 | 0.023 | 0.029 | ||
| 10 | 12 | 10 | 12 | |||
Note: 1. The EAS Test condition is VDD=-30V,VGS =-10V,L = 0.5mH, Rg=25
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