N Channel MOSFET Siliup SP85N01BGHTO 85V Featuring Fast Switching and Low RDSon for Power Management
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP85N01BGHTO is an 85V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched, and high frequency circuits, as well as power management. The device is packaged in a TOLL package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP85N01BGHTO
- Channel Type: N-Channel
- Technology: Advanced Split Gate Trench Technology
- Package: TOLL
Technical Specifications
| Parameter | Symbol | Test Condition | Rating | Unit |
|---|---|---|---|---|
| Product Summary | ||||
| V(BR)DSS | 85 | V | ||
| RDS(on)TYP | @10V | 1.3 | m | |
| ID | 350 | A | ||
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDS | 85 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current (Tc=25) | ID | (Tc=25) | 350 | A |
| Continuous Drain Current (Tc=100) | ID | (Tc=100) | 234 | A |
| Pulsed Drain Current | IDM | 1400 | A | |
| Single Pulse Avalanche Energy | EAS | 2386 | mJ | |
| Power Dissipation (Tc=25) | PD | (Tc=25) | 456 | W |
| Thermal Resistance Junction-to-Case | RJC | 0.27 | /W | |
| Storage Temperature Range | TSTG | -55 to 150 | ||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 85 - 90 | V |
| Drain Cut-Off Current | IDSS | VDS = 68V, VGS = 0V | - - 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - - 0.1 | |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 - 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - 1.3 1.6 | m |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | VDS =40V, VGS = 0V, f = 1.0MHz | - 11547 - | pF |
| Output Capacitance | Coss | - 2788 - | ||
| Reverse Transfer Capacitance | Crss | - 87 - | ||
| Total Gate Charge | Qg | VDS=40V , VGS=10V , ID=130A | - 253 - | nC |
| Gate-Source Charge | Qgs | - 68 - | ||
| Gate-Drain Charge | Qg | - 63 - | ||
| Switching Characteristics | ||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 40V, ID=130A , RG = 1.6 | - 45 - | nS |
| Rise Time | tr | - 38 - | ||
| Turn-Off Delay Time | td(off) | - 118 - | ||
| Fall Time | tf | - 45 - | ||
| Source-Drain Diode Characteristics | ||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - - 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - - 350 | A | |
| Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | - 109 - | nS |
| Reverse Recovery Charge | Qrr | - 315 - | nC | |
| Package Information | ||||
| Package Type | TOLL | |||
| Order Information | Device | Package | Unit/Tape | |
| SP85N01BGHTO | TOLL | 2000 | ||
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina