Low Rdson 110V N Channel MOSFET Siliup SP011N02AGHTO for Hard Switched and Power Management Circuits
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Delivery Time:
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Product Description
Product Overview
The SP011N02AGHTO is a 110V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, enabled by advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched, and high-frequency circuits, as well as power management. The device is available in a TOLL package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP011N02AGHTO
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: TOLL
Technical Specifications
| Parameter | Symbol | Test Condition | Rating | Unit |
|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 110 | V | |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 110 - 120 | V |
| Drain-Source ON Resistance (Typ.) | RDS(on)TYP | @10V | 1.6 | m |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V , ID=20A | - 1.6 2.1 | m |
| Continuous Drain Current | ID | @10V | 340 | A |
| Continuous Drain Current | ID | (Tc=25) | 340 | A |
| Continuous Drain Current | ID | (Tc=100) | 214 | A |
| Pulsed Drain Current | IDM | 1360 | A | |
| Single Pulse Avalanche Energy | EAS | 1956 | mJ | |
| Power Dissipation | PD | (Tc=25) | 320 | W |
| Thermal Resistance Junction-to-Case | RJC | 0.39 | /W | |
| Gate-Source Voltage | VGS | 20 | V | |
| Storage Temperature Range | TSTG | -55 to 150 | ||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||
| Drain Cut-Off Current | IDSS | VDS=80V , VGS=0V , TJ=25 | - - 1 | A |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - - 100 | |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2 3 4 | V |
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - 12220 - | pF |
| Output Capacitance | Coss | - 1946 - | ||
| Reverse Transfer Capacitance | Crss | - 33 - | ||
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=125A | - 198 - | nC |
| Gate-Source Charge | Qgs | - 51 - | ||
| Gate-Drain Charge | Qg | - 37 - | ||
| Turn-On Delay Time | td(on) | VDD=50V, VGS=10V , RG=1.6, ID=125A | - 25 - | nS |
| Rise Time | tr | - 75 - | ||
| Turn-Off Delay Time | td(off) | - 89 - | ||
| Fall Time | tf | - 29 - | ||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - - 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - - 340 | A | |
| Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | - 108 - | nS |
| Reverse Recovery Charge | Qrr | - 276 - | nC |
Order Information:
| Device | Package | Unit/Tape |
|---|---|---|
| SP011N02AGHTO | TOLL | 2000 |
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