Siliup SP11M65TG 650V MOSFET Featuring Low Gate Charge and High Avalanche Energy Rating for Power Supplies
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Product Description
Product Overview
The SP11M65TG is a 650V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-efficiency power applications. It features fast switching speeds, low gate charge, and a low RDS(on). This MOSFET is 100% tested for single pulse avalanche energy. Ideal applications include PD chargers, large screen displays, telecom power supplies, and server power supplies.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP11M65TG
- Marking: 11M65
- Package: TO-220F
Technical Specifications
| Parameter | Symbol | Test Condition | Rating | Unit | |
|---|---|---|---|---|---|
| Product Summary | |||||
| Drain-Source Breakdown Voltage | V(BR)DSS | 650 | V | ||
| RDS(on) Typ. | @10V | 0.34 | |||
| Continuous Drain Current | ID | 11 | A | ||
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage | VDS | (Ta=25) | 650 | V | |
| Gate-Source Voltage | VGS | (Ta=25) | 30 | V | |
| Continuous Drain Current (Tc=25) | ID | (Tc=25) | 11 | A | |
| Continuous Drain Current (Tc=100) | ID | (Tc=100) | 7 | A | |
| Pulsed Drain Current | IDM | 33 | A | ||
| Power Dissipation (Tc=25) | PD | (Tc=25) | 31 | W | |
| Single Pulsed Avalanche Energy | EAS | 220 | mJ | ||
| Junction-to-Case Thermal Resistance | RJC | 4.03 | /W | ||
| Storage Temperature Range | TSTG | -55 to 150 | |||
| Operating Junction Temperature Range | TJ | -55 to 150 | |||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 650 | V | |
| Drain Cut-Off Current | IDSS | VDS = 520V, VGS = 0V | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 30V, VDS = 0V | - | 0.1 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2 - 4 | V | |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 5.5A | - 0.42 | ||
| Dynamic Characteristics | |||||
| Input Capacitance | Ciss | VDS=50V, VGS = 0V, f = 1.0MHz | - 702 | pF | |
| Output Capacitance | Coss | - 53 | pF | ||
| Reverse Transfer Capacitance | Crss | - 3 | pF | ||
| Total Gate Charge | Qg | VDS=520V , VGS=10V , ID=10.5A | - 15 | nC | |
| Gate-Source Charge | Qgs | - 4 | |||
| Gate-Drain Charge | Qgd | - 5 | |||
| Switching Characteristics | |||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 520V, ID=10.5A , RG = 25 | - 24 | nS | |
| Rise Time | tr | - 24 | |||
| Turn-Off Delay Time | td(off) | - 34 | |||
| Fall Time | tf | - 37 | |||
| Source-Drain Body Diode Characteristics | |||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - 1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | - 11 | A | ||
| Reverse Recovery Time | trr | IS=5.5A, di/dt=100A/us, TJ=25 | - 280 | nS | |
| Reverse Recovery Charge | Qrr | - 3.5 | uC | ||
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