Digital transistor ROHM UMH33NTN featuring built in bias resistors and inverter circuit capability for muting
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Product Description
Product Overview
The UMH33N is a digital transistor featuring built-in bias resistors, designed for muting applications. It integrates two DTC923TUB chips within a single SOT-363 (UMT6) package. Key advantages include a high breakdown voltage of 40V (BVEBO), low output ON resistance (typically 0.6), and the ability to configure an inverter circuit without external input resistors due to the integrated R1 (2.2k) biasing resistor. This product is suitable for muting functions.Product Attributes
- Brand: ROHM
- Package Type: SOT-363 (UMT6)
- Taping Code: TR
- Reel Size: 180 mm
- Tape Width: 8 mm
- Basic Ordering Unit: 3000 pcs
- Marking: H33
Technical Specifications
| Parameter | Symbol | Values | Unit | Conditions |
|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25C) <For DTr1 and DTr2 in common> | ||||
| Collector-base voltage | VCBO | 40 | V | |
| Collector-emitter voltage | VCEO | 20 | V | |
| Emitter-base voltage | VEBO | 40 | V | |
| Collector current | IC | 400 | mA | |
| Power dissipation | PD*1*2 | 150 | mW/Total | |
| Junction temperature | Tj | 150 | ||
| Range of storage temperature | Tstg | -55 to +150 | ||
| Electrical Characteristics (Ta = 25C) <For DTr1 and DTr2 in common> | ||||
| Collector-base breakdown voltage | BVCBO | 40 | V | IC = 50A |
| Collector-emitter breakdown voltage | BVCEO | 20 | V | IC = 1mA |
| Emitter-base breakdown voltage | BVEBO | 40 | V | IE = 50A |
| Collector cut-off current | ICBO | - | 500 nA | VCB = 40V |
| Emitter cut-off current | IEBO | - | 500 nA | VEB = 40V |
| Collector-emitter saturation voltage | VCE(sat) | 30 to 100 | mV | IC = 30mA, IB = 3mA |
| DC current gain | hFE | 820 to 2700 | - | VCE = 5V, IC = 10mA |
| Transition frequency | fT*3 | 35 | MHz | VCE = 6V, IE = -4mA, f = 10MHz |
| Input resistance | R1 | 1.54 to 2.86 | k | |
| Output ON resistance | Ron | 0.6 | Vi = 5V, RL = 1k, f = 1kHz | |
*1 Each terminal mounted on a reference land.
*2 120mW per element must not be exceeded.
*3 Characteristics of built-in transistor
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina