Thyristor Shenzhen Haoruijia Elec RS1608B CW for in AC Phase Control and Frequency Converter Systems

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Product Description

Product Overview

The RS1606B/RS1608B series are advanced thyristors utilizing glass passivation technology, offering low on-state voltage drop, high reliability, and stability. They are primarily used in dimming, temperature control, and voltage regulation circuits. Applications include household appliances like microwave ovens, washing machines, fans, and water dispensers, as well as AC phase control, choppers, inverters, frequency converters, and solid-state relays.

Product Attributes

Brand: (Haoruijia)
Origin: Shenzhen, China
Material: Glass Passivation
Packaging: TO-220A/M/F, TO-263
Storage Conditions: Temperature 10-30, Humidity

Technical Specifications

Name	Symbol	Specification Value	Unit	Test Condition	Quadrant
Repetitive Peak Off-State Voltage	VDRM/VRRM	600/800	V
On-State RMS Current	IT(RMS)	16	A	Tc=105
Surge Current	ITSM	168	A	Sinusoidal 60Hz t=16.7ms
I2t	I2t	144	A2s	tp=10ms
Critical Rate of Rise of On-State Current	dI/dt	50	A/s	IG=2IGT tr100ns F=120Hz
Peak Gate Current	IGM	4	A	Tj=125 tp=20s
Peak Gate Voltage	VGM	5	V	Tj=125
Peak Gate Power	PGM	5	W	Tj=125
Average Gate Power	PG(AV)	1	W	Tj=125
Junction Temperature	Tj	125
Storage Temperature	Tstg	-40~150
Repetitive Peak Off-State Current	IDRM/IRRM	MAX 5	A	VDRM=VRRM Tj=25	SW
Repetitive Peak Off-State Current	IDRM/IRRM	MAX 2	mA	VDRM=VRRM Tj=125	SW
On-State Voltage	VTM	MAX 1.55	V	IT=22.5A tp=380s	SW
Holding Current	IH	MAX 15 / 35 / 50	mA	IGT=500mA	SW
Latching Current	IL	MAX 25 / 50 / 70	mA	IG= 1.2IGT	-
Latching Current	IL	30 / 60 / 80	mA	IG= 1.2IGT
Gate Trigger Current	IGT	MAX 10 / 35 / 50	mA	VD=12V RL=30	--
Gate Trigger Voltage	VGT	1.3	V		SW
Non-Trigger Gate Voltage	VGD	MIN 0.2	V	VD=VDRM RL=3.3K Tj=125	SW
Critical Rate of Rise of Off-State Voltage	dV/dt	MIN 40 / 500 / 1000	V/s	VDM=67%VDRM Gate open Tj=125	SW
Critical Rate of Rise of Commutation Voltage	(dV/dt)C	MIN 10	V/s	VDM=400V Tj=125 (dI/dt)C=1.8A/ms Gate open	SW
Repetitive Peak Off-State Current	IDRM	MAX 5	A	VDRM=VRRM Tj=25	C
Repetitive Peak Off-State Current	IDRM	MAX 2	mA	VDRM=VRRM Tj=125	C
On-State Voltage	VTM	MAX 1.55	V	IT=22.5A tp=380s	C
Holding Current	IH	MAX 25 / 50	mA	IGT=500mA	C
Latching Current	IL	MAX 40 / 50	mA	IG= 1.2IGT	--
Latching Current	IL	80 / 100	mA	IG= 1.2IGT
Gate Trigger Current	IGT	MAX 25 / 50	mA	VD=12V RL=30	--
Gate Trigger Current	IGT	50 / 100	mA	VD=12V RL=30
Gate Trigger Voltage	VGT	1.3	V		C
Non-Trigger Gate Voltage	VGD	MIN 0.2	V	VD=VDRM RL=3.3K Tj=125	C
Critical Rate of Rise of Off-State Voltage	dV/dt	MIN 200 / 400	V/s	VDM=67%VDRM Gate open Tj=125	C
Critical Rate of Rise of Commutation Voltage	(dV/dt)C	MIN 5 / 10	V/s	(dI/dt)C=5.3A/ms Gate open Tj=125	C