40V N Channel MOSFET Siliup SP40N01AGTO Featuring Fast Switching and Low Rdson for Power Applications
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Product Description
Product Overview
The SP40N01AGTO is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is ideal for PWM applications, hard switched, and high-frequency circuits, as well as power management. The device is offered in a TOLL package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP40N01AGTO
- Technology: Advanced Split Gate Trench Technology
- Package: TOLL
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 40 | V | ||||
| RDS(on)TYP | @10V | 0.65 | m | |||
| RDS(on)TYP | @4.5V | 0.85 | m | |||
| ID | 350 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 350 | A | |||
| Continuous Drain Current (Tc=100) | ID | 233 | A | |||
| Pulsed Drain Current | IDM | 1400 | A | |||
| Single Pulse Avalanche Energy | EAS | 2756 | mJ | |||
| Power Dissipation (Tc=25) | PD | 500 | W | |||
| Thermal Resistance (Junction-to-Case) | RJC | 0.25 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 40 | 48 | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V, VGS=0V, TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =250uA | 1 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=50A | - | 0.65 | 0.75 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=35A | - | 0.85 | 1.1 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V, VGS=0V, f=1MHz | - | 11000 | - | pF |
| Output Capacitance | Coss | - | 3700 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 130 | - | pF | |
| Total Gate Charge | Qg | VDS=20V, VGS=10V, ID=20A | - | 174 | - | nC |
| Gate-Source Charge | Qgs | - | 36 | - | ||
| Gate-Drain Charge | Qg | - | 30 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=20V, VGS=10V, RG=1.6, ID=20A | - | 28 | - | nS |
| Rise Time | Tr | - | 30 | - | ||
| Turn-Off Delay Time | Td(off) | - | 168 | - | ||
| Fall Time | Tf | - | 88 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 350 | A | |
| Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | - | 66 | - | nS |
| Reverse Recovery Charge | Qrr | - | 240 | - | nC | |
| TOLL Package Information (Dimensions in Millimeters) | |||
|---|---|---|---|
| Symbol | Min. | Nom. | Max. |
| A | 2.20 | 2.30 | 2.40 |
| b | 0.65 | 0.75 | 0.85 |
| C | 0.508 | REF | |
| D | 10.25 | 10.40 | 10.55 |
| D1 | 2.85 | 3.00 | 3.15 |
| E | 9.75 | 9.90 | 10.05 |
| E1 | 9.65 | 9.80 | 9.95 |
| E2 | 8.95 | 9.10 | 9.25 |
| E3 | 7.25 | 7.40 | 7.55 |
| e | 1.20 BSC | ||
| F | 1.05 | 1.20 | 1.35 |
| H | 11.55 | 11.70 | 11.85 |
| H1 | 6.03 | 6.18 | 6.33 |
| H2 | 6.85 | 7.00 | 7.15 |
| H3 | 3.00 BSC | ||
| L | 1.55 | 1.70 | 1.85 |
| L1 | 0.55 | 0.7 | 0.85 |
| L2 | 0.45 | 0.6 | 0.75 |
| M | 0.08 REF. | ||
| 8 | 10 | 12 | |
| K | 4.25 | 4.40 | 4.55 |
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