Power MOSFET 120V N Channel Siliup SP012N09GHTH with Low On Resistance and Avalanche Energy Protection
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Product Description
Product Overview
The SP012N09GHTH is a 120V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, this MOSFET offers fast switching, low gate charge, and low RDS(on). It is designed for power switching applications, battery management, and uninterruptible power supply systems. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP012N09GHTH
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | - | - | - | - | 120 | V |
| RDS(on)TYP | - | @10V | - | 9.0 | - | m |
| ID | - | - | - | - | 65 | A |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | - | - | - | 120 | V |
| Gate-Source Voltage | VGS | - | - | ±20 | - | V |
| Continuous Drain Current (Tc=25) | ID | - | - | - | 65 | A |
| Continuous Drain Current (Tc=100) | ID | - | - | - | 45 | A |
| Pulsed Drain Current | IDM | - | - | - | 260 | A |
| Single Pulse Avalanche Energy | EAS | 1 | - | - | 272 | mJ |
| Power Dissipation (Tc=25) | PD | - | - | - | 96 | W |
| Thermal Resistance Junction-to-Case | RθJC | - | - | 1.3 | - | /W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0 V, ID=250 μA | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=120 V, VGS=0 V | - | - | 1 | μA |
| Gate Leakage Current | IGSS | VGS=±20 V | - | - | ±0.1 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250 μA | 2 | 3 | 4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10 V, ID=30 A | - | 9 | 12 | mΩ |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =60V, VGS = 0V, f = 1.0MHz | - | 3045 | - | pF |
| Output Capacitance | Coss | - | - | 280 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 22 | - | pF |
| Total Gate Charge | Qg | VDS=60V , VGS=10V , ID=30A | - | 54 | - | nC |
| Gate-Source Charge | Qgs | - | - | 21 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 14 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 20V, VDS =60V, ID=50A RG = 4.7Ω | - | 16 | - | nS |
| Rise Time | tr | - | - | 9.5 | - | nS |
| Turn-Off Delay Time | td(off) | - | - | 35 | - | nS |
| Fall Time | tf | - | - | 8.4 | - | nS |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25°C | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 65 | A |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/μs, TJ=25°C | - | 80 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 156 | - | nC |
| Package Information | ||||||
| Package Type | - | - | - | - | TO-252 | - |
| Pin Configuration | - | (1:G 2:D 3:S) | - | - | - | - |
| Order Information (Unit/Tube) | - | - | - | - | 2500 | Unit/Tube |
| Marking | - | 012N09GH : Product code : Week code | - | - | - | - |
Note 1: EAS test condition is VDD=50V, VGS=10V, L=0.5mH, RG=25Ω.
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