Silicon Carbide MOSFET Siliup SP25N120CTF Featuring 1200V Drain Source Voltage and Low RDSon for Switching

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Product Description

Product Overview

The SP25N120CTF is a 1200V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd. It features high-speed switching with low capacitances, high blocking voltage with low RDS(on), and is designed for easy paralleling and simple driving. This RoHS compliant device is suitable for applications such as Power Factor Correction Modules, Switch Mode Power Supplies, Photovoltaic Inverters, UPS Power Supplies, and High Voltage DC/DC Converters.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Material: Silicon Carbide (SiC)
Package: TO-247
Certifications: RoHS Compliant
Device Code: 25N120C

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS				1200	V
On-Resistance	RDS(on)TYP	@18V		60		m
Drain Current	ID				25	A
Absolute Maximum Ratings
Drain-Source Voltage	VDS	(Ta=25)			1200	V
Gate-Source Voltage	VGSMAX	(Ta=25)			-8/+22	V
Recommended Gate-Source Voltage	VGSop	(Ta=25)		-4/+18		V
Continuous Drain Current	ID	(Tc=25)			52	A
Continuous Drain Current	ID	(Tc=100)			25	A
Pulsed Drain Current	IDM				80	A
Single Pulse Avalanche Energy	EAS				1125	mJ
Power Dissipation	PD	(Tc=25)			171	W
Power Dissipation	PD	(Tc=100)			68	W
Thermal Resistance Junction-to-Case	RJC				0.73	/W
Storage Temperature Range	TSTG		-55		175
Operating Junction Temperature Range	TJ		-55		175
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	1200	-	-	V
Drain-Source Leakage Current	IDSS	VDS=1200V , VGS=0V , TJ=25	-	1	-	uA
Gate-Source Leakage Current	IGSS	VGS=18V , VDS=0V	-	-	250	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =5mA, Tj=25	2	2.5	4	V
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =5mA, Tj=100	-	1.8	-	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=18V , ID=20A, Tj=25	-	60	75	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=18V , ID=20A, Tj=150	-	90	-	m
Input Capacitance	Ciss	VDS=1000V , VGS=0V , f=1MHz	-	1920	-	pF
Output Capacitance	Coss		-	80	-	pF
Reverse Transfer Capacitance	Crss		-	5	-	pF
Total Gate Charge	Qg	VDS=800V , VGS=-4/+18V , ID=20A	-	87	-	nC
Gate-Source Charge	Qgs		-	29	-	nC
Gate-Drain Charge	Qgd		-	31	-	nC
Rise Time	Tr		-	75	-	ns
Turn-Off Delay Time	Td(off)		-	89	-	ns
Fall Time	Tf		-	29	-	ns
Diode Forward Voltage	VSD	VGS=-4V , ISD=20A , TJ=25	-	4.5	-	V
Diode Forward Voltage	VSD	VGS=-4V , ISD=20A , TJ=150	-	4	-	V
Continuous Diode Forward Current	IS	VGS=-4V, Tc=25C	-	52	-	A
Continuous Diode Forward Current	IS	VGS=-4V, Tc=100C	-	25	-	A
Reverse Recovery Time	trr	VGS=-4V, ISD=20A, VR=800V, di/dt=3700A/s	-	32	-	nS
Reverse Recovery Charge	Qrr		-	265	-	nC
Peak Reverse Recovery Current	Irrm		-	16	-	A
Package Information (TO-247)
Symbol	Dimensions In Millimeters	Dimensions In Inches	Min.	Max.	Min.	Max.
A	4.850 - 5.150	0.191 - 0.200
A1	2.200 - 2.600	0.087 - 0.102
b	1.000 - 1.400	0.039 - 0.055
b1	2.800 - 3.200	0.110 - 0.126
b2	1.800 - 2.200	0.071 - 0.087
c	0.500 - 0.700	0.020 - 0.028
c1	1.900 - 2.100	0.075 - 0.083
D	15.450 - 15.750	0.608 - 0.620
E1	3.500 REF.	0.138 REF.
E2	3.600 REF.	0.142 REF.
L	40.900 - 41.300	1.610 - 1.626
L1	24.800 - 25.100	0.976 - 0.988
L2	20.300 - 20.600	0.799 - 0.811
	7.100 - 7.300	0.280 - 0.287
e	5.450 TYP.	0.215 TYP.
H	5.980 REF.	0.235 REF.
h	0.000 - 0.300	0.000 - 0.012