Digital NPN Transistor ROHM DTC044TEBTL Featuring Built in Bias Resistors for Easy On Off Control Circuits
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Product Description
Product Overview
The DTC044T series is a family of NPN digital transistors featuring built-in bias resistors, simplifying circuit design by eliminating the need for external input resistors. These transistors are designed for inverter circuits and offer easy operation by only requiring the setting of on/off conditions. They are suitable for applications such as inverters, interfaces, and drivers. Complementary PNP types are available in the DTA044T series.
Product Attributes
- Brand: ROHM
- Type: NPN Digital Transistor (Bias Resistor Built-in Transistor)
Technical Specifications
| Model | Package | Package Size | Collector-Emitter Voltage (VCEO) | Collector Current (IC) | Input Resistance (R1) | Power Dissipation (PD) |
|---|---|---|---|---|---|---|
| DTC044TM | SOT-723 (VMT3) | 1212 | 50V | 60mA | 47k (Typ.) | 150mW |
| DTC044TEB | SOT-416FL (EMT3F) | 1616 | 50V | 60mA | 47k (Typ.) | 150mW |
| DTC044TUB | SOT-323FL (UMT3F) | 2021 | 50V | 60mA | 47k (Typ.) | 200mW |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | 50 | V | |||
| Collector-emitter voltage | VCEO | 50 | V | |||
| Emitter-base voltage | VEBO | 5 | V | |||
| Collector current | IC*1 | 60 | mA | |||
| Junction temperature | Tj | 150 | ||||
| Range of storage temperature | Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | BVCBO | IC = 50A | 50 | - | - | V |
| Collector-emitter breakdown voltage | BVCEO | IC = 1mA | 50 | - | - | V |
| Emitter-base breakdown voltage | BVEBO | IE = 50A | 5 | - | - | V |
| Collector cut-off current | ICBO | VCB = 50V | - | - | 500 | nA |
| Emitter cut-off current | IEBO | VEB = 4V | - | - | 500 | nA |
| Collector-emitter saturation voltage | VCE(sat) | IC = 5mA, IB = 0.5mA | - | 50 | 150 | mV |
| DC current gain | hFE | VCE = 10V, IC = 5mA | 100 | - | 600 | - |
| Input resistance | R1 | - | 32.9 | 61.1 | k | |
| Transition frequency | fT*1 | VCE = 10V, IE = -5mA, f = 100MHz | - | 250 | - | MHz |
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land.
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