Hefei Purple Horn E-Commerce Co., Ltd.
                                                                                                           
Verified Supplier
17 Years
Since 2009
Menu

Power Switching MOSFET SP015N16GHTH 150V N Channel with Low RDSon and Fast Switching in TO 252 Package

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The SP015N16GHTH is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed with advanced split gate trench technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for power switching applications, DC-DC converters, and power management systems. It is available in a TO-252 package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP015N16GHTH
  • N-Channel Power MOSFET
  • Package: TO-252

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
V(BR)DSS 150 V
RDS(on) @10V 16 m
ID 45 A
Features
Fast Switching
Low Gate Charge and Rdson
Advanced Split Gate Trench Technology
100% Single Pulse Avalanche Energy Test
Applications
Power switching application
DC-DC Converter
Power Management
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25, unless otherwise noted) 150 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) ID 45 A
Continuous Drain Current (Tc=100) ID 30 A
Pulsed Drain Current IDM 180 A
Single Pulse Avalanche Energy1 EAS 225 mJ
Power Dissipation (Tc=25) PD 120 W
Thermal Resistance Junction-to-Case RJC 1.04 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Static Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 150 - - V
Drain Cut-Off Current IDSS VDS = 120V, VGS = 0V - - 1 A
Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 0.1 A
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 3.0 4.0 V
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 20A - 16 20 m
Dynamic Characteristics
Input Capacitance Ciss VDS = 75V, VGS = 0V, f = 1.0MHz - 1869 - pF
Output Capacitance Coss - 153 - pF
Reverse Transfer Capacitance Crss - 9 - pF
Total Gate Charge Qg VDS=75V , VGS=10V , ID=20A - 25 - nC
Gate-Source Charge Qgs - 7.8 -
Gate-Drain Charge Qg d - 4 -
Switching Characteristics
Turn-On Delay Time td(on) VGS = 10V, VDS = 50V, ID = 20A, RG = 6 - 13 - nS
Rise Time tr - 5 -
Turn-Off Delay Time td(off) - 21 -
Fall Time tf - 5 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 45 A
Body Diode Reverse Recovery Time Trr IS=20A, di/dt=100A/us, TJ=25 - 70 - nS
Body Diode Reverse Recovery Charge Qrr - 156 - nC
Order Information
Device Package Unit/Tube
SP015N16GHTH TO-252 2500
Marking 015N16GH : Product code ** : Week code
Package Information (TO-252)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 2.200 - 2.400 0.087 - 0.094
A1 0.000 - 0.127 0.000 - 0.005
b 0.660 - 0.860 0.026 - 0.034
c 0.460 - 0.580 0.018 - 0.023
D 6.500 - 6.700 0.256 - 0.264
D1 5.100 - 5.460 0.201 - 0.215
D2 4.830 REF. 0.190 REF.
E 6.000 - 6.200 0.236 - 0.244
e 2.186 - 2.386 0.086 - 0.094
L 9.800 - 10.400 0.386 - 0.409
L1 2.900 REF. 0.114 REF.
L2 1.400 - 1.700 0.055 - 0.067
L3 1.600 REF. 0.063 REF.
L4 0.600 - 1.000 0.024 - 0.039
1.100 - 1.300 0.043 - 0.051
0 - 8 0 - 8
h 0.000 - 0.300 0.000 - 0.012
V 5.350 REF. 0.211 REF.

Get in Touch

Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

Request A Quote

Please check your email address.
Your message must be at least 20 characters.