200V N Channel Power MOSFET with Low Gate Charge and Fast Switching Siliup SP020N09GHTF in TO 247 Package
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP020N09GHTF is a 200V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is ideal for PWM applications, hard switched and high frequency circuits, and power management systems. The device is supplied in a TO-247 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP020N09GHTF
- Channel Type: N-Channel
- Package: TO-247
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | 200 | V | |||
| On-Resistance (Typical) | RDS(on)TYP | @10V | 9 | m | ||
| Continuous Drain Current | ID | 130 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 200 | V | ||
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 20 | V | ||
| Continuous Drain Current (Tc=25) | ID | (Ta=25, unless otherwise noted) | 130 | A | ||
| Continuous Drain Current (Tc=100) | ID | (Ta=25, unless otherwise noted) | 87 | A | ||
| Pulsed Drain Current | IDM | (Ta=25, unless otherwise noted) | 520 | A | ||
| Single Pulse Avalanche Energy | EAS | (Ta=25, unless otherwise noted) | 1296 | mJ | ||
| Power Dissipation (Tc=25) | PD | (Ta=25, unless otherwise noted) | 300 | W | ||
| Thermal Resistance Junction-Case | RJC | (Ta=25, unless otherwise noted) | 0.42 | /W | ||
| Storage Temperature Range | TSTG | (Ta=25, unless otherwise noted) | -55 | 150 | ||
| Operating Junction Temperature Range | TJ | (Ta=25, unless otherwise noted) | -55 | 150 | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 200 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 160V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 9 | 11.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =100V, VGS = 0V, f = 1.0MHz | - | 4183 | - | pF |
| Output Capacitance | Coss | VDS =100V, VGS = 0V, f = 1.0MHz | - | 437 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS =100V, VGS = 0V, f = 1.0MHz | - | 12 | - | pF |
| Total Gate Charge | Qg | VDS=100V , VGS=10V , ID=20A | - | 48 | - | nC |
| Gate-Source Charge | Qgs | VDS=100V , VGS=10V , ID=20A | - | 31 | - | nC |
| Gate-Drain Charge | Qgd | VDS=100V , VGS=10V , ID=20A | - | 11 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS =100V, RL=3.5 RG = 6.0 | - | 13 | - | nS |
| Rise Time | tr | VGS = 10V, VDS =100V, RL=3.5 RG = 6.0 | - | 25 | - | nS |
| Turn-Off Delay Time | td(off) | VGS = 10V, VDS =100V, RL=3.5 RG = 6.0 | - | 31 | - | nS |
| Fall Time | tf | VGS = 10V, VDS =100V, RL=3.5 RG = 6.0 | - | 25 | - | nS |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 130 | A | |
| Reverse Recovery Time | Trr | IS=140A, di/dt=100A/us, TJ=25 | - | 165 | - | nS |
| Reverse Recovery Charge | Qrr | IS=140A, di/dt=100A/us, TJ=25 | - | 521 | - | nC |
| Package Information (TO-247) | ||||||
| Dimension | Symbol | Millimeters (Min/Max) | Inches (Min/Max) | |||
| A | 4.850 / 5.150 | 0.191 / 0.200 | ||||
| A1 | 2.200 / 2.600 | 0.087 / 0.102 | ||||
| b2 | 1.800 / 2.200 | 0.071 / 0.087 | ||||
| b | 1.000 / 1.400 | 0.039 / 0.055 | ||||
| b1 | 2.800 / 3.200 | 0.110 / 0.126 | ||||
| c | 0.500 / 0.700 | 0.020 / 0.028 | ||||
| c1 | 1.900 / 2.100 | 0.075 / 0.083 | ||||
| D | 15.450 / 15.750 | 0.608 / 0.620 | ||||
| E1 | 3.500 REF. | 0.138 REF. | ||||
| E2 | 3.600 REF. | 0.142 REF. | ||||
| L | 40.900 / 41.300 | 1.610 / 1.626 | ||||
| L1 | 24.800 / 25.100 | 0.976 / 0.988 | ||||
| L2 | 20.300 / 20.600 | 0.799 / 0.811 | ||||
| 7.100 / 7.300 | 0.280 / 0.287 | |||||
| e | 5.450 TYP. | 0.215 TYP. | ||||
| H1 | 5.980 REF. | 0.235 REF. | ||||
| h | 0.000 / 0.300 | 0.000 / 0.012 | ||||
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