Shenzhen ruichips Semicon RU7080L Power MOSFET Featuring Ultra Low On Resistance and Application

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Product Description

RU7080L N-Channel Advanced Power MOSFET

The RU7080L is an N-Channel Advanced Power MOSFET featuring a super high dense cell design and ultra-low on-resistance. It is 100% avalanche tested and available in lead-free and green devices (RoHS compliant). This MOSFET is designed for applications requiring high efficiency and performance.

Product Attributes

Brand: Ruichips Semiconductor Co., Ltd
Origin: CHINA
Certifications: RoHS Compliant

Technical Specifications

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
Drain-Source Voltage	VDSS				70	V
Gate-Source Voltage	VGSS			25		V
Maximum Junction Temperature	TJ				175	C
Storage Temperature Range	TSTG		-55		175	C
Diode Continuous Forward Current	IS	TC=25C			80	A
Pulsed Drain Current	IDP	TC=25C			320	A
Tested Continuous Drain Current(VGS=10V)	ID	TC=25C		80		A
		TC=100C		56		A
Maximum Power Dissipation	PD	TC=25C		125		W
		TC=100C		62.5		W
Thermal Resistance-Junction to Case	RJC				1.2	C/W
Thermal Resistance-Junction to Ambient	RJA	Mounted on Large Heat Sink			100	C/W
Avalanche Energy, Single Pulsed	EAS				225	mJ
Electrical Characteristics (TC=25C Unless Otherwise Noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, IDS=250A	70			V
Zero Gate Voltage Drain Current	IDSS	VDS=70V, VGS=0V			1	A
		TJ=125C			30	A
Gate Threshold Voltage	VGS(th)	VDS=VGS, IDS=250A	2		4	V
Gate Leakage Current	IGSS	VGS=25V, VDS=0V			100	nA
Drain-Source On-state Resistance	RDS(ON)	VGS=10V, IDS=40A		5.7	8	m
Diode Forward Voltage	VSD	ISD=40A, VGS=0V			1.2	V
Reverse Recovery Time	trr	ISD=40A, dlSD/dt=100A/s			45	ns
Reverse Recovery Charge	Qrr				93	nC
Gate Resistance	RG				1.5
Input Capacitance	Ciss	VGS=0V,VDS=35V,F=1MHz		3450		pF
Output Capacitance	Coss	VGS=0V, VDS=35V, Frequency=1.0MHz		930		pF
Reverse Transfer Capacitance	Crss			230		pF
Turn-on Delay Time	td(ON)	VDD=35V, IDS=40A, VGEN=10V,RG=4.7		40		ns
Turn-on Rise Time	tr			132		ns
Turn-off Delay Time	td(OFF)	VDS=56V, VGS=10V, IDS=40A		180		ns
Turn-off Fall Time	tf			90		ns
Total Gate Charge	Qg			67		nC
Gate-Source Charge	Qgs			14		nC
Gate-Drain Charge	Qgd			22		nC