Shenzhen ruichips Semicon RU40120S Power MOSFET with 100 Percent Avalanche Tested and RoHS Compliant
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Product Description
Product Overview
The RU40120S is an N-Channel Advanced Power MOSFET from Ruichips Semiconductor, designed for high-efficiency power applications. It features a Super High Dense Cell Design, ultra-low on-resistance (RDS(ON) = 3.5m Typ. @ VGS=10V), and 100% avalanche tested. This device is suitable for DC-DC converters and other power management solutions. Lead Free and Green Devices are available (RoHS Compliant).
Product Attributes
- Brand: Ruichips Semiconductor Co., Ltd
- Model: RU40120S
- Certifications: RoHS Compliant (Lead Free and Green Devices Available)
- Package: TO263
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250A | 40 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 2 | 4 | V | |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, IDS=60A | 3.5 | 4.5 | m | |
| Diode Forward Voltage | VSD | ISD=60A, VGS=0V | 1.2 | V | ||
| Reverse Recovery Time | trr | ISD=60A, dlSD/dt=100A/s | 33 | ns | ||
| Reverse Recovery Charge | Qrr | ISD=60A, dlSD/dt=100A/s | 30 | nC | ||
| Gate Resistance | RG | VGS=0V, VDS=0V, F=1MHz | 1.8 | |||
| Input Capacitance | Ciss | VGS=0V, VDS=20V, Frequency=1.0MHz | 3700 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=20V, Frequency=1.0MHz | 680 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=20V, Frequency=1.0MHz | 345 | pF | ||
| Turn-on Delay Time | td(ON) | VDD=20V, IDS=60A, VGEN=10V,RG=4.7 | 36 | ns | ||
| Turn-on Rise Time | tr | VDD=20V, IDS=60A, VGEN=10V,RG=4.7 | 205 | ns | ||
| Turn-off Delay Time | td(OFF) | VDD=20V, IDS=60A, VGEN=10V,RG=4.7 | 85 | ns | ||
| Turn-off Fall Time | tf | VDD=20V, IDS=60A, VGEN=10V,RG=4.7 | 45 | ns | ||
| Total Gate Charge | Qg | VDS=32V, IDS=60A | 90 | nC | ||
| Gate-Source Charge | Qgs | VDS=32V, IDS=60A | 32 | nC | ||
| Gate-Drain Charge | Qgd | VDS=32V, IDS=60A | 37 | nC | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=40V, VGS=0V | 1 | A | ||
| Drain-Source Avalanche Ratings | EAS | IAS =40A, VDD = 32V, RG = 50 , Starting TJ = 25C | 400 | mJ | ||
| Diode Continuous Forward Current | IS | TC=25C | 120 | A | ||
| 300s Pulse Drain Current | IDP | TC=25C | 480 | A | ||
| Tested Continuous Drain Current(VGS=10V) | ID | TC=25C | 120 | A | ||
| Tested Continuous Drain Current(VGS=10V) | ID | TC=100C | 103 | A | ||
| Maximum Power Dissipation | PD | TC=25C | 150 | W | ||
| Thermal Resistance-Junction to Case | RJC | 1 | C/W | |||
| Thermal Resistance-Junction to Ambient | RJA | Mounted on Large Heat Sink | 62.5 | C/W |
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