100V P Channel MOSFET Siliup SP010P36GTH Featuring Fast Switching and Low RDSon for Power Management
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP010P36GTH is a 100V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% single pulse avalanche energy tested and is suitable for power switching applications, battery management, and uninterruptible power supplies.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010P36GTH
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -100 | V | |||
| RDS(on) | -10V | 36 | m | |||
| RDS(on) | -4.5V | 51 | m | |||
| Continuous Drain Current | ID | -25 | A | |||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | -25 | A | |||
| Continuous Drain Current (Tc=100) | ID | -17 | A | |||
| Pulsed Drain Current | IDM | -100 | A | |||
| Single Pulse Avalanche Energy | EAS | 196 | mJ | |||
| Power Dissipation (Tc=25) | PD | 95 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.32 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = -250A, VGS = 0V | -100 | V | ||
| Drain Cut-Off Current | IDSS | VDS = -80V, VGS = 0V | -1 | uA | ||
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1 | -2.2 | -3 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=-10V , ID=-15A | 36 | 45 | m | |
| Drain-Source ON Resistance | RDS(ON) | VGS=-4.5V , ID=-10A | 51 | 68 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-50V, VGS =-10V, f=1.0MHz | 1456 | pF | ||
| Output Capacitance | Coss | 225 | pF | |||
| Reverse Transfer Capacitance | Crss | 3 | pF | |||
| Total Gate Charge | Qg | VDS=-50V , VGS=-10V , ID=20A | 20 | nC | ||
| Gate-Source Charge | Qgs | 6.1 | nC | |||
| Gate-Drain Charge | Qgd | 3.5 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS=-10V,VDD=-50V, ID=-5A, RG=6 | 11 | nS | ||
| Rise Time | tr | 56 | nS | |||
| Turn-Off Delay Time | td(off) | 46 | nS | |||
| Fall Time | tf | 84 | nS | |||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -25 | A | |||
| Reverse Recovery Time | Trr | IS=-15A, di/dt=-100A/us, TJ=25 | 55 | nS | ||
| Reverse Recovery Charge | Qrr | 140 | nC | |||
Note: EAS test condition is VDD=-50V,VGS=-10V,L=0.5mH,RG=25.
| TO-252 Package Information | ||||
|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 REF. | 0.190 REF. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 REF. | 0.114 REF. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 REF. | 0.063 REF. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 REF. | 0.211 REF. | ||
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