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P Channel MOSFET Shenzhen ruichips Semicon RU30P3B with super high density cell design and RoHS compliance

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Product Description

Product Overview

The RU30P3B is a P-Channel Advanced Power MOSFET from Ruichips Semiconductor, designed for efficient power management. It features a -30V drain-source voltage and a continuous drain current of -3.5A, with low on-resistance of 50m (Typ.) at VGS=-10V and 80m (Typ.) at VGS=-4.5V. This MOSFET boasts a super high-density cell design, offering reliability and ruggedness. It is available in lead-free and green (RoHS compliant) versions.

Product Attributes

  • Brand: Ruichips
  • Origin: CHINA
  • Certifications: RoHS Compliant
  • Package: SOT23
  • Device Marking: RU30P3B

Technical Specifications

ParameterSymbolTest ConditionMin.Typ.Max.Unit
Absolute Maximum RatingsVDSS-30V
VGSS20V
TJ150C
Common RatingsIDTA=25C-3.5A
PDTA=25C, Mounted on Large Heat Sink1W
Electrical CharacteristicsBVDSSVGS=0V, IDS=-250A-30V
RDS(ON)VGS=-10V, IDS=-3.5A50m
Diode CharacteristicsVSDISD=-1A, VGS=0V-1.2V
Dynamic CharacteristicsCissVGS=0V, VDS=0V, F=1MHz550pF
CossVGS=0V, VDS=-15V, Frequency=1.0MHz95pF
CrssVGS=0V, VDS=-15V, Frequency=1.0MHz50pF
Gate Charge CharacteristicsQgVDS=-24V, IDS=-3.5A, VGS=-10V12nC
QgsVDS=-24V, IDS=-3.5A, VGS=-10V1.3nC
QgdVDS=-24V, IDS=-3.5A, VGS=-10V2.5nC
td(ON)VDD=-15V, IDS=-3.5A, VGEN=-10V,RG=65ns
Thermal ResistanceRJAWhen mounted on 1 inch square copper board, t10sec125C/W

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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