Shenzhen ruichips Semicon RU3091M N Channel Power MOSFET with ultra low on resistance and fast switching speed
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Delivery Time:
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Product Description
Product Overview
The RU3091M is an N-Channel Advanced Power MOSFET designed for high-efficiency power applications. It features a super high dense cell design, ultra-low on-resistance, and fast switching speeds, making it ideal for DC/DC converters, load switches, and synchronous rectification. This device is 100% avalanche tested and available in lead-free and green (RoHS compliant) versions.
Product Attributes
- Brand: Ruichips Semiconductor
- Model: RU3091M
- Package: PDFN5060
- Certifications: RoHS Compliant (Lead Free and Green Devices Available)
Technical Specifications
| Symbol | Parameter | Test Condition | RU3091M | Unit |
| Absolute Maximum Ratings | ||||
| VDSS | Drain-Source Voltage | 30 | V | |
| VGSS | Gate-Source Voltage | ±20 | V | |
| TJ | Maximum Junction Temperature | 150 | °C | |
| TSTG | Storage Temperature Range | -55 to 150 | °C | |
| IS | Diode Continuous Forward Current | TC=25°C | 50 | A |
| IDP | Pulse Drain Current | 300μs Pulse, TC=25°C | 360 | A |
| ID | Continuous Drain Current@TC(VGS=10V) | TC=25°C | 90 | A |
| ID | Continuous Drain Current@TC(VGS=10V) | TC=100°C | 57 | A |
| ID | Continuous Drain Current@TA(VGS=10V) | TA=25°C | 28 | A |
| ID | Continuous Drain Current@TA(VGS=10V) | TA=70°C | 21 | A |
| PD | Maximum Power Dissipation@TC | TC=25°C | 54 | W |
| PD | Maximum Power Dissipation@TC | TC=100°C | 22 | W |
| PD | Maximum Power Dissipation@TA | TA=25°C | 4.2 | W |
| PD | Maximum Power Dissipation@TA | TA=70°C | 2.7 | W |
| EAS | Avalanche Energy, Single Pulsed | 156 | mJ | |
| Electrical Characteristics | ||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250μA | 30 | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=30V, VGS=0V | 1 | μA |
| IDSS | Zero Gate Voltage Drain Current | TJ=125°C | 30 | μA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250μA | 1.0 - 2.5 | V |
| IGSS | Gate Leakage Current | VGS=±20V, VDS=0V | ±100 | nA |
| RDS(ON) | Drain-Source On-state Resistance | VGS=4.5V, IDS=35A | 3.4 - 4.5 | mΩ |
| RDS(ON) | Drain-Source On-state Resistance | VGS=10V, IDS=50A | 2.8 - 3.5 | mΩ |
| Diode Characteristics | ||||
| VSD | Diode Forward Voltage | ISD=50A, VGS=0V | 1.2 | V |
| trr | Reverse Recovery Time | ISD=50A, dlSD/dt=100A/μs | 30 | ns |
| Qrr | Reverse Recovery Charge | ISD=50A, dlSD/dt=100A/μs | 36 | nC |
| Dynamic Characteristics | ||||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | 1.3 | Ω |
| Ciss | Input Capacitance | VGS=0V, VDS=15V, Frequency=1.0MHz | 3280 | pF |
| Coss | Output Capacitance | VGS=0V, VDS=15V, Frequency=1.0MHz | 580 | pF |
| Crss | Reverse Transfer Capacitance | VGS=0V, VDS=15V, Frequency=1.0MHz | 290 | pF |
| td(ON) | Turn-on Delay Time | VDD=15V,IDS=20A, VGEN=10V,RG=4.7Ω | 8 | ns |
| tr | Turn-on Rise Time | VDD=15V,IDS=20A, VGEN=10V,RG=4.7Ω | 12 | ns |
| td(OFF) | Turn-off Delay Time | VDD=15V,IDS=20A, VGEN=10V,RG=4.7Ω | 35 | ns |
| tf | Turn-off Fall Time | VDD=15V,IDS=20A, VGEN=10V,RG=4.7Ω | 9 | ns |
| Gate Charge Characteristics | ||||
| Qg | Total Gate Charge | VDS=24V, VGS=10V, IDS=20A | 60 | nC |
| Qgs | Gate-Source Charge | VDS=24V, VGS=10V, IDS=20A | 15 | nC |
| Qgd | Gate-Drain Charge | VDS=24V, VGS=10V, IDS=20A | 22 | nC |
| Thermal Resistance | ||||
| RθJC | Thermal Resistance-Junction to Case | 2.3 | °C/W | |
| RθJA | Thermal Resistance-Junction to Ambient | 30 | °C/W | |
| Ordering and Marking Information | ||||
| Device Marking | RU3091M | |||
| Package | PDFN5060 | |||
| Packaging | Tape&Reel | |||
| Quantity | 3000 | |||
| Reel Size | 13'' | |||
| Tape width | 12mm | |||
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