rugged P Channel MOSFET Shenzhen ruichips Semicon RU20P7C optimized for load switching applications

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

The RU20P7C is a P-Channel Advanced Power MOSFET designed for efficient power management applications. It features low on-resistance, a super high-density cell design, and is reliable and rugged. This device is suitable for load switching, power management, and battery protection circuits. Available in lead-free and green (RoHS compliant) versions.

Product Attributes

Brand: Ruichips
Origin: Shenzhen, China
Certifications: RoHS Compliant (Lead Free and Green Devices Available)
Package: SOT23-3

Technical Specifications

Parameter	Symbol	Rating	Unit	Test Condition
Drain-Source Breakdown Voltage	BVDSS	-20	V	VGS=0V, IDS=-250A
Gate Threshold Voltage	VGS(th)	-0.4 to -1.1	V	VDS=VGS, IDS=-250A
Gate Leakage Current	IGSS	±100	nA	VGS=±16V, VDS=0V
Zero Gate Voltage Drain Current	IDSS	-1	µA	VDS=-20V, VGS=0V, TJ=125°C
Drain-Source On-state Resistance	RDS(ON)	20 (Typ.)	mΩ	VGS=-4.5V, IDS=-5A
Drain-Source On-state Resistance	RDS(ON)	30 (Typ.)	mΩ	VGS=-2.5V, IDS=-4A
Diode Forward Voltage	VSD	-1.2	V	ISD=-5A, VGS=0V
Reverse Recovery Time	trr	17	ns	ISD=-1A, dlSD/dt=100A/µs
Reverse Recovery Charge	Qrr	23	nC	ISD=-1A, dlSD/dt=100A/µs
Input Capacitance	Ciss	640 (Typ.)	pF	VGS=0V,VDS=0V,F=1MHz
Output Capacitance	Coss	135 (Typ.)	pF	VGS=0V, VDS=-10V, Frequency=1.0MHz
Reverse Transfer Capacitance	Crss	65 (Typ.)	pF	VGS=0V, VDS=-10V, Frequency=1.0MHz
Turn-on Delay Time	td(ON)	9 (Typ.)	ns	VDD=-10V, RL=3.8Ω, IDS=-5A, VGEN=-4.5V, RG=6Ω
Turn-on Rise Time	tr	16 (Typ.)	ns	VDD=-10V, RL=3.8Ω, IDS=-5A, VGEN=-4.5V, RG=6Ω
Turn-off Delay Time	td(OFF)	45 (Typ.)	ns	VDD=-10V, RL=3.8Ω, IDS=-5A, VGEN=-4.5V, RG=6Ω
Turn-off Fall Time	tf	21 (Typ.)	ns	VDD=-10V, RL=3.8Ω, IDS=-5A, VGEN=-4.5V, RG=6Ω
Total Gate Charge	Qg	10 (Typ.)	nC	VDS=-16V, VGS=-10V, IDS=-5A
Gate-Source Charge	Qgs	2 (Typ.)	nC	VDS=-16V, VGS=-10V, IDS=-5A
Gate-Drain Charge	Qgd	3 (Typ.)	nC	VDS=-16V, VGS=-10V, IDS=-5A
Continuous Drain Current	ID	-5	A	TA=25°C, VGS=-4.5V
Continuous Drain Current	ID	-4	A	TA=70°C, VGS=-4.5V
Pulse Drain Current	IDP	-20	A	TA=25°C
Maximum Power Dissipation	PD	1.3	W	Mounted on Large Heat Sink, TA=25°C
Maximum Power Dissipation	PD	0.8	W	Mounted on Large Heat Sink, TA=70°C
Thermal Resistance-Junction to Case	RθJC	100	°C/W	Mounted on Large Heat Sink
Thermal Resistance-Junction to Ambient	RθJA	300µs Pulse	°C/W	When mounted on 1 inch square copper board
Drain-Source Voltage	VDSS	-20	V	Common Ratings
Gate-Source Voltage	VGSS	±16	V	Absolute Maximum Ratings
Maximum Junction Temperature	TJ	150	°C	Absolute Maximum Ratings
Storage Temperature Range	TSTG	-55 to 150	°C	Absolute Maximum Ratings