40V N Channel Power MOSFET Siliup SP40N06GNJ with Low RDSon and Single Pulse Avalanche Energy Tested
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Product Description
Product Overview
The SP40N06GNJ is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications, PWM applications, and DC-DC converters. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP40N06GNJ
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 40 | V | |||
| RDS(on) TYP | RDS(on) | @10V | 6 | m | ||
| RDS(on) TYP | RDS(on) | @4.5V | 8.5 | m | ||
| ID | ID | 30 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 30 | A | |||
| Continuous Drain Current (Tc=100) | ID | 20 | A | |||
| Pulsed Drain Current | IDM | 120 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 81 | mJ | |||
| Power Dissipation (Tc=25) | PD | 26 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 4.8 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V , ID=20A | - | 6.0 | 7.5 | m |
| Drain-Source ON Resistance | RDS(ON) | VGS=4.5V , ID=10A | - | 8.5 | 12 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 623 | - | pF |
| Output Capacitance | Coss | - | 311 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 21 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=85A | - | 21 | - | nC |
| Gate-Source Charge | Qgs | - | 4 | - | ||
| Gate-Drain Charge | Qgd | - | 5 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=20V, VGS=10V, RG=1.6, ID=85A | - | 7 | - | nS |
| Rise Time | tr | - | 2.5 | - | ||
| Turn-Off Delay Time | td(off) | - | 21 | - | nS | |
| Fall Time | tf | - | 3.5 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 30 | A | |
| Reverse Recovery Time | trr | IS=20A, di/dt=100A/us, TJ=25 | - | 28 | - | nS |
| Reverse Recovery Charge | Qrr | - | 16 | - | nC | |
| Package Information (DFN3X3-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.650 | 0.850 | 0.026 | 0.033 | ||
| A1 | 0.152 REF. | 0.006 REF. | ||||
| A2 | 0~0.05 | 0~0.002 | ||||
| D | 2.900 | 3.100 | 0.114 | 0.122 | ||
| D1 | 2.300 | 2.600 | 0.091 | 0.102 | ||
| E | 2.900 | 3.100 | 0.114 | 0.122 | ||
| E1 | 3.150 | 3.450 | 0.124 | 0.136 | ||
| E2 | 1.535 | 1.935 | 0.060 | 0.076 | ||
| b | 0.200 | 0.400 | 0.008 | 0.016 | ||
| e | 0.550 | 0.750 | 0.022 | 0.030 | ||
| L | 0.300 | 0.500 | 0.012 | 0.020 | ||
| L1 | 0.180 | 0.480 | 0.007 | 0.019 | ||
| L2 | 0~0.100 | 0~0.004 | ||||
| L3 | 0~0.100 | 0~0.004 | ||||
| H | 0.315 | 0.515 | 0.012 | 0.020 | ||
| 9 | 13 | 9 | 13 | |||
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