Power MOSFET Siliup SP015P80GTD 150V P Channel with Split Gate Trench Technology and Low Gate Charge
Price:
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP015P80GTD is a 150V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, it offers fast switching, low gate charge, and low RDS(on). This device is ideal for power switching applications, DC-DC converters, and power management systems. It features 100% single pulse avalanche energy testing for enhanced reliability.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 015P80G
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -150 | V | |||
| RDS(on) | RDS(on)TYP | @-10V | 85 | 106 | m | |
| RDS(on) | RDS(on)TYP | @-4.5V | 94 | 125 | m | |
| Continuous Drain Current | ID | -35 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | -150 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | -35 | A | ||
| Continuous Drain Current | ID | (Tc=100) | -23 | A | ||
| Pulsed Drain Current | IDM | -140 | A | |||
| Single Pulse Avalanche Energy | EAS | 400 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 155 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.81 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID= -250uA | -150 | V | ||
| Drain Cut-Off Current | IDSS | VDS= -120V , VGS=0V | -1 | A | ||
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID = -250uA | -1 | -1.9 | -2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS= -10V , ID= -30A | 85 | 106 | m | |
| Drain-Source ON Resistance | RDS(ON) | VGS= -4.5V , ID= -20A | 94 | 125 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS= -75V,VGS=0V,f=1MHZ | 3275 | pF | ||
| Output Capacitance | Coss | 137 | pF | |||
| Reverse Transfer Capacitance | Crss | 14 | pF | |||
| Total Gate Charge | Qg | VDS= -75V , VGS= -10V , ID= -15A | 92 | nC | ||
| Gate-Source Charge | Qgs | 9 | nC | |||
| Gate-Drain Charge | Qg d | 19 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD= -75V, VGS=-10V , RG=1.6, ID= -15A | 68 | nS | ||
| Rise Time | tr | 18 | nS | |||
| Turn-Off Delay Time | td(off) | 70 | nS | |||
| Fall Time | tf | 35 | nS | |||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = -1A, VGS = 0V | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -35 | A | |||
| Reverse Recovery Time | Trr | IS= -15A, di/dt=100A/us, TJ=25 | 350 | nS | ||
| Reverse Recovery Charge | Qrr | 86 | nC | |||
| Package Information (TO-263) | ||||||
| Dimension | Symbol | Min (mm) | Max (mm) | Min (in) | Max (in) | |
| A | A | 4.470 | 4.670 | 0.176 | 0.184 | |
| A1 | A1 | 0.000 | 0.150 | 0.000 | 0.006 | |
| B | B | 1.120 | 1.420 | 0.044 | 0.056 | |
| b | b | 0.710 | 0.910 | 0.028 | 0.036 | |
| b1 | b1 | 1.170 | 1.370 | 0.046 | 0.054 | |
| c | c | 0.310 | 0.530 | 0.012 | 0.021 | |
| c1 | c1 | 1.170 | 1.370 | 0.046 | 0.054 | |
| D | D | 10.010 | 10.310 | 0.394 | 0.406 | |
| E | E | 8.500 | 8.900 | 0.335 | 0.350 | |
| e | e | 2.540 TYP. | 0.100 TYP. | |||
| e1 | e1 | 4.980 | 5.180 | 0.196 | 0.204 | |
| L | L | 14.940 | 15.500 | 0.588 | 0.610 | |
| L1 | L1 | 4.950 | 5.450 | 0.195 | 0.215 | |
| L2 | L2 | 2.340 | 2.740 | 0.092 | 0.108 | |
| L3 | L3 | 1.300 | 1.700 | 0.051 | 0.067 | |
| 0 | 8 | 0 | 8 | |||
| V | V | 5.600 REF. | 0.220 REF. | |||
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