N Channel Power MOSFET SP85N02AGHTD 85V 260A TO 263 Package Suitable for Power Switching Applications
Price:
Negotiable
MOQ:
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Delivery Time:
Negotiable
Product Description
Product Overview
The SP85N02AGHTD is an 85V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) due to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems. It is available in a TO-263 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP85N02AGHTD
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: TO-263
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 85 | V | |||
| RDS(on) | RDS(on)TYP | @10V | 1.9 | m | ||
| Continuous Drain Current | ID | 260 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25 unless otherwise noted) | 85 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | (Tc=25) | 260 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 175 | A | ||
| Pulsed Drain Current | IDM | 1040 | A | |||
| Single Pulse Avalanche Energy | EAS | 1650 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 240 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.52 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 85 | 90 | - | V |
| Drain Cut-Off Current | IDSS | VDS = 68V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.5 | 3.0 | 3.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 1.9 | 2.5 | m |
| Input Capacitance | Ciss | VDS =40V, VGS = 0V, f = 1.0MHz | - | 9100 | - | pF |
| Output Capacitance | Coss | - | 4700 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 190 | - | pF | |
| Total Gate Charge | Qg | VDS=40V , VGS=10V , ID=165A | - | 143 | - | nC |
| Gate-Source Charge | Qgs | - | 51 | - | ||
| Gate-Drain Charge | Qgd | - | 25 | - | ||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 40V, ID=165A , RG = 1.6 | - | 27 | - | nS |
| Rise Time | tr | - | 75 | - | ||
| Turn-Off Delay Time | td(off) | - | 86 | - | ||
| Fall Time | tf | - | 35 | - | ||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 260 | A | |
| Reverse Recovery Time | Trr | IS=155A, di/dt=100A/us, TJ=25 | - | 115 | - | nS |
| Reverse Recovery Charge | Qrr | - | 320 | - | nC | |
| Package Information (TO-263) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.470 | 4.670 | 0.176 | 0.184 | ||
| A1 | 0.000 | 0.150 | 0.000 | 0.006 | ||
| B | 1.120 | 1.420 | 0.044 | 0.056 | ||
| b | 0.710 | 0.910 | 0.028 | 0.036 | ||
| b1 | 1.170 | 1.370 | 0.046 | 0.054 | ||
| c | 0.310 | 0.530 | 0.012 | 0.021 | ||
| c1 | 1.170 | 1.370 | 0.046 | 0.054 | ||
| D | 10.010 | 10.310 | 0.394 | 0.406 | ||
| E | 8.500 | 8.900 | 0.335 | 0.350 | ||
| e | 2.540 TYP. | 0.100 TYP. | ||||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 | ||
| L | 14.940 | 15.500 | 0.588 | 0.610 | ||
| L1 | 4.950 | 5.450 | 0.195 | 0.215 | ||
| L2 | 2.340 | 2.740 | 0.092 | 0.108 | ||
| L3 | 1.300 | 1.700 | 0.051 | 0.067 | ||
| 0 | 8 | 0 | 8 | |||
| V | 5.600 REF. | 0.220 REF. | ||||
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