Lead free complementary MOSFET Siliup SP4012CP8 40V surface mount device designed for battery protection

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Price: Negotiable

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Product Description

Product Overview

The SP4012CP8 is a 40V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this lead-free, surface-mount device is ideal for battery protection, load switching, and power management applications. It features 100% single-pulse avalanche energy testing for enhanced reliability.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Line: Complementary MOSFET
Lead Free: Yes
Package Type: SOP-8L
Device Code: 4012

Technical Specifications

Parameter	Symbol	Conditions	N-Channel (Typ.)	P-Channel (Typ.)	Units
Product Summary
Drain-Source Voltage	V(BR)DSS		40	-40	V
On-Resistance	RDS(on)	@10V	13	-	m
On-Resistance	RDS(on)	@4.5V	18	-	m
Continuous Drain Current	ID		9	-7	A
On-Resistance	RDS(on)	@-10V	-	26	m
On-Resistance	RDS(on)	@-4.5V	-	35	m
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDS		40	-40	V
Gate-Source Voltage	VGS		20	20	V
Continuous Drain Current	ID		9	-7	A
Pulsed Drain Current	IDM		36	-28	A
Single Pulse Avalanche Energy	EAS		18	36	mJ
Power Dissipation	PD		2.5		W
Thermal Resistance Junction-to-Ambient	RJA		50		/W
Storage Temperature Range	TSTG		-55 to 150
Operating Junction Temperature Range	TJ		-55 to 150
N-Channel Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	40	-	V
Drain-Source Leakage Current	IDSS	VDS=32V , VGS=0V , TJ=25	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	1.0 - 2.5	-	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=10V , ID=7A	13 - 18	-	m
Input Capacitance	Ciss	VDS=15V , VGS=0V , f=1MHz	1061	-	pF
Output Capacitance	Coss		110	-	pF
Reverse Transfer Capacitance	Crss		95	-	pF
Total Gate Charge	Qg	VDS=32V , VGS=4.5V , ID=7A	25	-	nC
Gate-Source Charge	Qgs		6.3	-	nC
Gate-Drain Charge	Qgd		4.6	-	nC
Turn-On Delay Time	Td(on)	VDD=20V, VGS=10V , RG=3, ID=7A	7.8	-	nS
Rise Time	Tr		10.7	-	nS
Turn-Off Delay Time	Td(off)		25.8	-	nS
Fall Time	Tf		4.6	-	nS
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	9	A
Reverse Recovery Time	Trr	IS=6A, di/dt=100A/us, TJ=25	-	15	nS
Reverse Recovery Charge	Qrr		-	5	nC
P-Channel Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250uA	-	-40	V
Drain-Source Leakage Current	IDSS	VDS=-32V , VGS=0V , TJ=25	-	-1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =-250uA	-	-1 to -2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V , ID=-5A	-	26 - 35	m
Input Capacitance	Ciss	VDS=-15V , VGS=0V , f=1MHz	-	1415	pF
Output Capacitance	Coss		-	134	pF
Reverse Transfer Capacitance	Crss		-	102	pF
Total Gate Charge	Qg	VDS=-15V , VGS=-4.5V , ID=-1A	-	23.5	nC
Gate-Source Charge	Qgs		-	3.4	nC
Gate-Drain Charge	Qgd		-	4.3	nC
Turn-On Delay Time	Td(on)	VDD=-15V VGS=-10V , RG=3, ID=-1A	-	11	nS
Rise Time	Tr		-	16.7	nS
Turn-Off Delay Time	Td(off)		-	35	nS
Fall Time	Tf		-	19	nS
Diode Forward Voltage	VSD	VGS=0V , IS=-1A , TJ=25	-	-1.2	V
Maximum Body-Diode Continuous Current	IS		-	-7	A
Reverse Recovery Time	Trr	IS=-6A, di/dt=-100A/us, TJ=25	-	23	nS
Reverse Recovery Charge	Qrr		-	13	nC
Package Information (SOP-8L)
Symbol	Dimensions (mm) Min.	Dimensions (mm) Max.
A	1.35	1.75
A1	0.10	0.25
A2	1.35	1.55
b	0.33	0.51
c	0.17	0.25
D	4.80	5.00
e	1.27 REF.
E	5.80	6.20
E1	3.80	4.00
L	0.40	1.27
	0	8